Formation of Silicon Oxynitride Films with Low Leakage Current Using N_2/O_2 Plasma near Atmospheric Pressure
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-11-30
著者
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HAYAKAWA Ryoma
Department of Applied Materials Science, Graduate School of Engineering, Osaka Prefecture University
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YOSHIMURA Takeshi
Department of Applied Materials Science, Graduate School of Engineering, Osaka Prefecture University
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ASHIDA Atushi
Department of Applied Materials Science, Graduate School of Engineering, Osaka Prefecture University
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KITAHATA Hiroya
Sekisui Chemical Co., Ltd.
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YUASA Motokazu
Sekisui Chemical Co., Ltd.
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FUJIMURA Norifumi
Department of Applied Materials Science, Graduate School of Engineering, Osaka Prefecture University
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Kitahata Hiroya
Department Of Applied Materials Science Graduate School Of Engineering Osaka Prefecture University
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