Novel Ferroelectric Gate Thin-Film Transistors Using a Polar Semiconductor Channel

スポンサーリンク

概要

• 論文の詳細を見る
• 2006-12-25

著者

• 藤村 紀文

  大阪府立大学大学院工学研究科電子・数物系専攻

• YOSHIMURA Takeshi

  Department of Applied Materials Science, Graduate School of Engineering, Osaka Prefecture University

• FUJIMURA Norifumi

  Department of Applied Materials Science, Graduate School of Engineering, Osaka Prefecture University

• ASHIDA Atsushi

  Department of Applied Materials Science, Graduate School of Engineering, Osaka Prefecture University

• Ashida A

  Department Of Physics And Electronics Graduate School Of Engineering Osaka Prefecture University

• Fujimura Norifumi

  Department Of Applied Materials Science Graduate School Of Engineering Osaka Prefecture University

• ARAI Ryota

  Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University

• MASUKO Keiichiro

  Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University

• Yoshimura Takeshi

  Department Of Applied Materials Science Graduate School Of Engineering Osaka Prefecture University

• Arai Ryota

  Department Of Physics And Electronics Graduate School Of Engineering Osaka Prefecture University

• Masuko Keiichiro

  Department Of Physics And Electronics Graduate School Of Engineering Osaka Prefecture University

関連論文

• 定電流電気化学堆積法による酸化亜鉛薄膜の作製 (特集 半導体エレクトロニクス)
• 定電流電気化学堆積法による酸化亜鉛薄膜の作製
• 21aVE-2 磁性強誘電体YMnO_3薄膜の磁気相転移温度近傍における誘電挙動2(21aVE 誘電体(マルチフェロ・リラクサー),領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
• 21aVE-1 磁性強誘電体YMnO_3薄膜の磁気相転移温度近傍における誘電挙動1(21aVE 誘電体(マルチフェロ・リラクサー),領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
• YMnO3系マルチフェロイック薄膜の物性と応用 (特集 マルチフェロイクス材料の作製と応用(1))
• 磁性強誘電体のマルチフェロイック物性
• YMnO_3/Y_2O_3/SiエピタキシャルMFIS構造の誘電特性
• Formation of Silicon Oxynitride Films with Low Leakage Current Using N_2/O_2 Plasma near Atmospheric Pressure
• Electro-Optic Effect in Epitaxial ZnO:Mn Thin Films
• Crystal Growth and Interfacial Characterization of Dielectric BaZrO_3 Thin Films on Si Substrates
• Ferroelectricity in Li-Doped ZnO:X Thin Films and their Application in Optical Switching Devices
• 18aYG-9 CeをドーピングしたSi系希薄磁性半導体におけるHall効果
• 新結晶・新物質 Si:Ce稀薄磁性半導体薄膜の新規な物性
• Lowering the Crystallization Temperature of YMnO_3 Thin Films by the Sol-Gel Method Using an Yttrium Alkoxide
• RMn0_3(R: rare earth element)/Y_2O_3/SiのC-V特性の解析
• レーザーアブレーション法によるZnO:X薄膜の作製と誘電特性
• RMnO_3(R:rare earth element)/Y_2O_3/SiのC-V特性の解析
• レーザーアブレーション法によるZnO : X薄膜の作製と誘電特性
• Effects of Stoichiometry and A-site Substitution on the Electrical Properties of Ferroelectric YMnO_3
• Fabrication of the finestructured alumina materials with nanoimprint method
• YMnO_3 Thin Films Prepared from Solutions for Non Volatile Memory Devices
• Fine-structured ZnO patterns with sub-micrometer on the ceramic surface fabricated by a replication method
• Fabrication of YMnO_3 Thin Films on Si Substrates by a Pulsed Laser Deposition Method
• Novel Ferroelectric Gate Thin-Film Transistors Using a Polar Semiconductor Channel
• Single-Wall Carbon Nanotube Field Effect Transistors with Non-Volatile Memory Operation
• Synthesis of Bi(Fe_xAl_)O_3 Thin Films by Pulsed Laser Deposition and Its Structural Characterization
• Improvement of Surface Morphology and Dielectric Property of YMn0_3 Films
• Smooth muscle contraction by small GTPase Rho
• Effects of Electron Irradiation on CuInS_2 Crystals
• サファイア基板上での強誘電体エピタキシャル薄膜 : 表面弾性波素子への応用
• 酸化物ヘテロ界面の化学結合様式と構造設計
• 酸化物薄膜の配向制御
• 機能性セラミックス薄膜の組織制御
• 弾性歪,界面歪拘束系におけるエピタキシャル成長メカニズムの理論的,実験的研究 (原子レベルでの結晶成長機構) -- (エピタキシ機構)
• 酸化物薄膜の配向制御とヘテロエピタキシー(ヘテロエピタキシー機構)
• Change in the water quality in Lake Ohnuma, Hokkaido, Japan: a comparison of 1977 and 1996
• Impedance Analysis of Controlled-Polarization-Type Ferroelectric-Gate Thin Film Transistor Using Resistor--Capacitor Lumped Constant Circuit
• Bi系超伝導薄膜における相変化及び過剰原子の挙動
• Characterization of Direct Piezoelectric Effect in 31 and 33 Modes for Application to Vibration Energy Harvester
• Effect of Ferroelectric Polarization Domain Structure on Electronic Transport Property of Ferroelectric/ZnO Heterostructure
• LiNbO3のエピタキシャル成長に及ぼす界面エネルギーの影響
• ZnOx薄膜のSAWデバイス,透明導電膜への応用
• LiNbO3薄膜の結晶成長
• 金属とSiの固相反応--シリサイドの形成
• Formation of the High-T_c Phase in Pb-Free Bi-Sr-Ca-Cu-O Thin Film
• Low-Temperature Growth and Characterization of Epitaxial YMnO3/Y2O3/Si MFIS Capacitors with Thinner Insulator Layer
• Effects of Postannealing on Orientation and Crystallinity of P-Type Transparent Conducting CuScO2 Thin Films
• Single-Wall Carbon Nanotube Field Effect Transistors with Non-Volatile Memory Operation
• Magnetic Properties of Uniformly Ce-Doped Si Thin Films with n-Type Conduction
• Ce-induced reconstruction of Si(001) surface structures
• Investigation of Gas Sensing Characteristics of TiO2 Nanotube Field-Effect Transistor
• Control of Crystal Structure of BiFeO3 Epitaxial Thin Films by Adjusting Growth Conditions and Piezoelectric Properties
• Orientation Control of ZnO Films Deposited Using Nonequilibrium Atmospheric Pressure N2/O2 Plasma
• Direct Piezoelectric Properties of Mn-Doped ZnO Epitaxial Films
• Polarization Switching Behavior of YMnO3 Thin Film at around Magnetic Phase Transition Temperature
• Formation of Silicon Oxynitride Films with Low Leakage Current Using N2/O2 Plasma near Atmospheric Pressure
• Effect of Additional Oxygen on Formation of Silicon Oxynitride Using Nitrogen Plasma Generated near Atmospheric Pressure
• Local Piezoelectric and Conduction Properties of BiFeO3 Epitaxial Thin Films
• Preferred Orientation, Phase Formation and the Electrical Properties of Pulsed Laser Deposited SrBi2Ta2O9 Thin Films
• Electrical Characteristics of Controlled-Polarization-Type Ferroelectric-Gate Field-Effect Transistor
• Growth and Ferromagnetic Properties of Ferroelectric YbMnO3 Thin Films
• Effects of Electron Irradiation on CuInS2 Crystals
• Polarization Hysteresis Loops of Ferroelectric Gate Capacitors Measured by Sawyer-Tower Circuit

もっと見る 閉じる

スポンサーリンク