Formation of Silicon Oxynitride Films with Low Leakage Current Using N2/O2 Plasma near Atmospheric Pressure
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概要
- 論文の詳細を見る
We have fabricated ultrathin silicon oxynitride films using N2/O2 plasma near atmospheric pressure. The silicon oxynitride films whose composition was Si3N1.2O4.3, as evaluated by X-ray photoemission spectroscopy, showed a leakage current as low as $1.4\times 10^{-4}$ A/cm2 at 5 MV/cm. Given a capacitance equivalent thickness of 1.9 nm, the leakage current is lower by two orders of magnitude than that of the reported silicon oxynitride films. The conduction mechanism of the leakage current of the film was discussed using direct-tunneling-current simulation with Webtzel-Kramers-Brillouin approximation. We concluded that an increase in the effective tunneling mass of holes, which is probably due to the nitrogen atoms incorporated to Si3N1.2O4.3 films, is responsible for the decrease in the leakage current of silicon oxynitride films.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-11-15
著者
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KITAHATA Hiroya
Sekisui Chemical Co., Ltd.
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ASHIDA Atsushi
Department of Applied Materials Science, Graduate School of Engineering, Osaka Prefecture University
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Fujimura Norifumi
Department Of Applied Materials Science Graduate School Of Engineering Osaka Prefecture University
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Hayakawa Ryoma
Department Of Applied Materials Science Graduate School Of Engineering Osaka Prefecture University
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Yuasa Motokazu
Sekisui Chemical Co. Ltd.
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Yoshimura Takeshi
Department Of Applied Materials Science Graduate School Of Engineering Osaka Prefecture University
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Fujimura Norifumi
Department of Applied Materials Science, Graduate School of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Sakai, Osaka 599-8531, Japan
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Hayakawa Ryoma
Department of Applied Materials Science, Graduate School of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Sakai, Osaka 599-8531, Japan
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Kitahata Hiroya
Sekisui Chemical Co., Ltd., 32 Wadai, Tsukuba, Ibaraki 300-4292, Japan
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Yuasa Motokazu
Sekisui Chemical Co., Ltd., 32 Wadai, Tsukuba, Ibaraki 300-4292, Japan
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Ashida Atushi
Department of Applied Materials Science, Graduate School of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Sakai, Osaka 599-8531, Japan
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