Effect of Ferroelectric Polarization Domain Structure on Electronic Transport Property of Ferroelectric/ZnO Heterostructure
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概要
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To discuss the effect of the ferroelectric domain structure on the electronic transport property in the channel of a ferroelectric gate thin film transistor, the electrical property of the ferroelectric gate stack structure of an organic ferroelectric copolymer of vinylidenefluoride and tetrafluoroethylene [P(VDF--TeFE)] and ZnO was investigated. Unlike the gate stack structure using a paraelectric layer, ferroelectrics possibly affect the electron transport in the channel through its domain structure. In this study, the Hall-effect measurements were carried out at various polarized states of P(VDF--TeFE). The Hall mobility at poling voltages from 100 to $-100$ V showed a gradual decrease with decreasing poling voltage, whereas the carrier concentration shows a slight change in the accumulation state. The change in the carrier concentration indicates the formation of the multidomain structure in P(VDF--TeFE). The multidomain structure might be attributed to the electron scattering in the ZnO channel layer.
- 2011-09-25
著者
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Fujimura Norifumi
Department Of Applied Materials Science Graduate School Of Engineering Osaka Prefecture University
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Yoshimura Takeshi
Department Of Applied Materials Science Graduate School Of Engineering Osaka Prefecture University
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Yamada Hiroaki
Department Of Chemistry Faculty Of Science Chiba Univeristy
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Yamada Hiroaki
Department of Physics and Electronics, Osaka Prefecture University, Sakai 599-8531, Japan
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Fukushima Tadahiro
Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, Sakai 599-8531, Japan
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Fukushima Tadahiro
Department of Physics and Electronics, Osaka Prefecture University, Sakai 599-8531, Japan
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Yoshimura Takeshi
Department of Physics and Electronics, Osaka Prefecture University, Sakai 599-8531, Japan
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