Preferred Orientation, Phase Formation and the Electrical Properties of Pulsed Laser Deposited SrBi2Ta2O9 Thin Films
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概要
- 論文の詳細を見る
Systematic studies on the preferred orientation, phase formation and the electrical properties of pulsed laser deposited SrBi2Ta2O9 (SBT) have been performed. At a substrate temperature of 600°C, the film on SiO2 was not crystallized. Above 650°C, very strong diffraction from a non-ferroelectric, (111)-oriented fluorite phase was obtained. Its crystallinity increased with increasing Bi content in the target. The fluorite phase was also observed in the film on Pt deposited below 600°C, which together with the pyrochlore phase resulted in the formation of an interfacial reaction product, Bi2Pt. Above 650°C, the films tend to grow as the perovskite SBT phase with a c-axis orientation which is not the polarization axis. In contrast, the formation of the fluorite and pyrochlore phases can be suppressed on Ir electrodes.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1998-09-30
著者
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Fujimura Norifumi
Department Of Applied Materials Science Graduate School Of Engineering Osaka Prefecture University
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Kingon Angus
Department Of Materials Science And Engineering North Carolina Sate University
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Streiffer Stephen
Department Of Materials Science And Engineering North Carolina State University
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Fujimura Norifumi
Department of Applied Materials Science, Osaka Prefecture University, Osaka, Japan
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Thomas Darin
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, USA
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Kingon Angus
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, USA
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Streiffer Stephen
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, USA
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