Electrical Characteristics of Controlled-Polarization-Type Ferroelectric-Gate Field-Effect Transistor

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概要

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• We propose a novel ferroelectric-gate field-effect transistor (FET) with a polar semiconductor channel, which is called a controlled-polarization-type ferroelectric-gate FET. The essential factor for this device is the stabilization of the spontaneous polarization of the ferroelectric film by the spontaneous polarization of a polar semiconductor, such as ZnO or GaN. We demonstrate two types of controlled-polarization-type ferroelectric-gate thin film transistors (TFTs), which are the ZnO/YMnO3/Pt bottom-gate-type structure and Pt/PZT/ZnO top-gate-type structure. Both structures show n-channel-type transistor operation with the memory effect originating from ferroelectricity. From the electrical characteristics of ferroelectric-gate TFTs, the effects of ferroelectricity, gate leakage current, space charge, and charge injection on the device operation are discussed.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-12-25

著者

• ASHIDA Atsushi

  Department of Applied Materials Science, Graduate School of Engineering, Osaka Prefecture University

• Fujimura Norifumi

  Department Of Applied Materials Science Graduate School Of Engineering Osaka Prefecture University

• Yoshimura Takeshi

  Department Of Applied Materials Science Graduate School Of Engineering Osaka Prefecture University

• Maeda Kazuhiro

  Department Of Biotechnology Faculty Of Technology Tokyo University Of Agriculture And Technology

• Masuko Keiichiro

  Department Of Physics And Electronics Graduate School Of Engineering Osaka Prefecture University

• Ashida Atsushi

  Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, Sakai 599-8531, Japan

• Maeda Kazuhiro

  Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, Sakai 599-8531, Japan

• Fukushima Tadahiro

  Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, Sakai 599-8531, Japan

• Masuko Keiichiro

  Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, Sakai 599-8531, Japan

• MAEDA Kazuhiro

  Department of Bioscience and Bioinformatics, Kyushu Institute of Technology

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