Polarization Switching Behavior of YMnO3 Thin Film at around Magnetic Phase Transition Temperature
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概要
- 論文の詳細を見る
The effects of antiferromagnetic ordering on the ferroelectric polarization switching behavior of an YMnO3 epitaxial thin film were investigated. The effects of magnetic ordering on ferroelectric polarization switching and dielectric permittivity under bias electric field at around the Néel temperature of YMnO3 (80 K) were studied. From temperature dependences of the dielectric permittivity and spontaneous polarization, an increase in the domain size with decreasing temperature was suggested. From high-speed capacitance measurement, it was also determined that domain wall motion increased with decreasing temperature. Moreover, it was determined that the suppression of polarization switching started at around 120–130 K, which is higher than Néel temperature of YMnO3.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-09-25
著者
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Fujimura Norifumi
Department Of Applied Materials Science Graduate School Of Engineering Osaka Prefecture University
-
Yoshimura Takeshi
Department Of Applied Materials Science Graduate School Of Engineering Osaka Prefecture University
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Maeda Kazuhiro
Department Of Biotechnology Faculty Of Technology Tokyo University Of Agriculture And Technology
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Fujimura Norifumi
Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, Sakai 599-8531, Japan
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MAEDA Kazuhiro
Department of Bioscience and Bioinformatics, Kyushu Institute of Technology
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