Structure of Microcrystalline Silicon Carbide Films Prepared by Hydrogen-Radical-Enhanced Chemical Vapor Deposition in Magnetic Field (<Special Issue> Plasma Processing)
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概要
- 論文の詳細を見る
Microcrystalline silicon carbide films were grown by hydrogen-radical-enhanced chemical vapor deposition in magnetic field. Tetramethylsilane was used as source material. Hydrogen radicals were generated by microwave plasma in magnetic field. Microcrystalline films grew on the Si substrate by supplying hydrogen radicals at temperatures higher than 250℃. The structure and the crystallinity of SiC films were investigated by cross-section transmission electron microscopy, electron probe microanalysis and X-ray photoelectron spectroscopy.
- 社団法人応用物理学会の論文
- 1994-07-30
著者
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YASUI Kanji
Department of Electronics, Faculty of Engineering, Nagaoka University of Technology
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AKAHANE Tadashi
Department of Electrical Engineering, Nagaoka University of Technology
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Yasui Kanji
Department Of Electrical Engineering Nagaoka University Of Technology
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Akahane Tadashi
Department Of Electrical Engineering Faculty Of Engineering Nagaoka University Of Technology
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Akahane Tadashi
Department Of Electrical Engineering Nagaoka University Of Technology
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MURAMOTO Masayoshi
Department of Electrical Engineering, Nagaoka University of Technology
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Akahane Tadashi
Deparment Of Electrical Engineering Faculty Of Engineering The Technological University Of Nagaoka
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Muramoto Masayoshi
Department Of Electrical Engineering Nagaoka University Of Technology
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