Hydrogen-Radical-Assisted Chemical Vapor Deposition of SiN Films Using Si(CH_3)_4 and NH_2CH_3
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-12-20
著者
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Kaneda S
Department Of Electronics Faculty Of Engineering Nagaoka University Of Technology
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Kaneda Shigeo
Department Of Electronics Faculty Of Engineering Technological University Of Nagaoka
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YASUI Kanji
Department of Electronics, Faculty of Engineering, Nagaoka University of Technology
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NASU Masaaki
Department of Electronics, Faculty of Engineering, Nagaoka University of Technology
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Yasui K
Department Of Applied Chemistry Tokyo Metropolitan University
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Kaneda Shigeo
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Yasui Kanji
Department Of Electrical Engineering Nagaoka University Of Technology
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Nasu M
Shizuoka Univ. Hamamatsu Jpn
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Yasui Kyuichi
Ultrasonic Processing Group Advanced Manufacturing Research Institute (amri) National Institute Of A
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Yasui Kenji
Department Of Applied Chemistry Tokyo Metropolitan University
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