The Growth of Single Crystal of 3C-SiC on the Si Substrate by the MBE Method Using Multi Electron Beam Heating
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1986-09-20
著者
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Kaneda Shigeo
Department Of Electronics Faculty Of Engineering Technological University Of Nagaoka
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SAKAMOTO Yoshiki
Department of Electronics, Faculty of Engineering, Technological University of Nagaoka
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NISHI Chikara
Department of Electronics, Faculty of Engineering, Technological University of Nagaoka
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KANAYA Masatoshi
Department of Electronics, Faculty of Engineering, Technological University of Nagaoka
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HANNAI Sei-ichi
Department of Electronics, Faculty of Engineering, Technological University of Nagaoka
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Kaneda Shigeo
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Nishi Chikara
Department Of Electronics Faculty Of Engineering Technological University Of Nagaoka:(present Addres
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Hannai Sei-ichi
Department Of Electronics Faculty Of Engineering Technological University Of Nagaoka:(present Addres
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Kanaya Masatoshi
Department Of Electronics Faculty Of Engineering Technological University Of Nagaoka:(present Addres
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Sakamoto Yoshiki
Department Of Applied Science For Electronics And Materials Kyushu University
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Sakamoto Yoshiki
Department Of Electronics Faculty Of Engineering Technological University Of Nagaoka
関連論文
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- Chemical Vapor Deposition of Low Hydrogen Content Silicon Nitride Films Using Microwave-Excited Hydrogen Radicals
- The Growth of Single Crystal of 3C-SiC on the Si Substrate by the MBE Method Using Multi Electron Beam Heating
- Enhanced Interlayer Coupling and Magnetoresistance Ratio in Fe_3Si/FeSi_2 Superlattices
- Millimeter-Wave Frequency Response of Hot Electrons in n-Type GaAs
- Growth of Amorphous SiN Films by Chemical Vapor Deposition Using Monomethylamine