Growth of Amorphous SiN Films by Chemical Vapor Deposition Using Monomethylamine
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概要
- 論文の詳細を見る
Chemical vapor deposition of silicon nitride film has been studied by using SiH4 and NH2CH3 as source gases for the deposition temperature region of $700\sim 900$°C. The deposition rate was somewhat larger than that of the case using SiH4 and NH3 gases. The film deposited at 900°C had a particularly smooth specular surface.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-08-20
著者
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Komaki Kazuki
Department Of Electronics Faculty Of Engineering Nagaoka University Of Technology
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Kaneda Shigeo
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Yasui Kanji
Department Of Electrical Engineering Nagaoka University Of Technology
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Katoh Hirohisa
Department Of Cardiovascular Medicine Gunma University Graduate School Of Medicine
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Katoh Hirohisa
Department of Electronics, Faculty of Engineering, Nagaoka University of Technology, Kamitomioka, Nagaoka 940-21
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