Improvement in Crystallinity of ZnO Films Prepared by rf Magnetron Sputtering with Grid Electrode
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概要
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ZnO films were prepared on Si and quartz substrates by rf magnetron sputtering with a mesh grid electrode. The influence of a negative grid bias on the crystallinity and optical property of ZnO films was investigated. At an appropriate dc grid bias, ZnO films with good crystallinity were grown from room temperature to 300°C. The number of stacking faults, which were observed in the X-ray diffraction spectra of the films deposited without the grid electrode, decreased in the films deposited with the grid electrode. All ZnO films showed a high transmittance in the visible region.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-01-15
著者
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Takata Masasuke
Department Of Electrical Engineering Nagaoka University Of Technology
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Yasui Kanji
Department Of Electrical Engineering Nagaoka University Of Technology
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KUROKI Yuichirou
Department of Electrical, Electronic and Information Engineering, Nagaoka University of Technology
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Akahane Tadashi
Deparment Of Electrical Engineering Faculty Of Engineering The Technological University Of Nagaoka
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Kuroki Yuichirou
Department of Electrical, Electronic and Information Engineering, Nagaoka University of Technology, Kamitomioka, Nagaoka, Niigata 940-2188, Japan
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Phuong Nguyen
Department of Electrical, Electronic and Information Engineering, Nagaoka University of Technology, Kamitomioka, Nagaoka, Niigata 940-2188, Japan
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Yasui Kanji
Department of Electrical, Electronic and Information Engineering, Nagaoka University of Technology, Kamitomioka, Nagaoka, Niigata 940-2188, Japan
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Takata Masasuke
Department of Electrical, Electronic and Information Engineering, Nagaoka University of Technology, Kamitomioka, Nagaoka, Niigata 940-2188, Japan
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