Low-Temperature Heteroepitaxial Growth of SiC on (100) Si Using Hot-Mesh Chemical Vapor Deposition
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概要
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The crystal growth of 3C-SiC films on (100) Si substrates by the hot-mesh chemical vapor deposition (HMCVD) method using monomethylsilane (MMS) as a source gas was investigated. A mesh structure of hot tungsten (W) wire was used as a catalyzer. At substrate temperatures above 750°C and at a mesh temperature of 1600°C, 3C-SiC crystal was epitaxially grown on Si substrates. From the X-ray rocking curve spectra of the (311) peak, SiC was also epitaxially grown in the substrate plane. From the dependence of growth rate on substrate temperature and W-mesh temperature, the growth mechanism of SiC films by HMCVD was considered.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-03-15
著者
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Narita Yuzuru
Department Of Electrical Electronic And Information Engineering Nagaoka University Of Technology
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Takata Masasuke
Department Of Electrical Engineering Nagaoka University Of Technology
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Eto Jyunpei
Department Of Electrical Electronic And Information Engineering Nagaoka University Of Technology
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Yasui Kanji
Department Of Electrical Engineering Nagaoka University Of Technology
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Akahane Tadashi
Deparment Of Electrical Engineering Faculty Of Engineering The Technological University Of Nagaoka
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Yasui Kanji
Department of Electrical, Electronic and Information Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka 940-2188, Japan
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Eto Jyunpei
Department of Electrical, Electronic and Information Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka 940-2188, Japan
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Akahane Tadashi
Department of Electrical, Electronic and Information Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka 940-2188, Japan
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