Preparation of Microcrystalline Silicon Carbide Films by Hydrogen-Radical-Enhanced Chemical Vapor Deposition Using Tetramethylsilane
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概要
- 論文の詳細を見る
In this paper, hydrogen-radical-enhanced chemical vapor deposition (HRCVD) is presented with the purpose of depositing microcrystalline silicon carbide (μc-SiC) films at a low temperature. As a source gas, tetramethylsilane (TMS) was used. Furthermore it is explained that TMS was decomposed by hydrogen radicals generated with microwave plasma, and the excess methyl radicals were extracted from the film-growing surface. Properties of μc-SiC film have been examined with the aid of infrared (IR) absorption spectroscopy, electron-probe microanalysis (EPMA), and reflective high-energy electron diffraction (RHEED).
- 社団法人応用物理学会の論文
- 1992-04-01
著者
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Yasui Kanji
Department Of Electrical Engineering Nagaoka University Of Technology
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Yasui Kanji
Department Of Electronics Nagaoka University Of Technology
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Fujita Akira
Department Of Biology Faculty Of Education Gifu University
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Fujita Akira
Department Of Electronics Nagaoka University Of Technology
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Akahane Tadashi
Department Of Electrical Engineering Faculty Of Engineering Nagaoka University Of Technology
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Akahane Tadashi
Department Of Electronics Nagaoka University Of Technology
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Akahane Tadashi
Deparment Of Electrical Engineering Faculty Of Engineering The Technological University Of Nagaoka
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