Hydrogen Plasma Annealing of ZnO Films Deposited by Magnetron Sputtering with Third Electrode
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概要
- 論文の詳細を見る
Al doped zinc oxide (AZO) films were deposited using a radio frequency (rf) magnetron sputtering apparatus with a mesh grid electrode. Improvement of crystalline uniformity was achieved by the use of an appropriate negative grid bias to effectively suppress the bombardment of high-energy charged particles onto the film surface. The uniformity of the films electronic properties, such as resistivity, carrier concentration and Hall mobility, was also improved using the sputtering method. Hydrogen plasma annealing was investigated to further decrease the resistivity of the ZnO films and the carrier concentration was increased by 1-2×1020cm-3 without decrease in the Hall mobility.
- （社）電子情報通信学会の論文
- 2009-12-01
著者
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Akahane T
Department Of Electrical Engineering Faculty Of Engineering Nagaoka University Of Technology
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Yasui Kanji
Faculty Of Engineering Nagaoka University Of Technology
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TAKATA Masasuke
Faculty of Engineering, Nagaoka University of Technology
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OOSHIMA Yutaka
Faculty of Engineering, Nagaoka University of Technology
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KUROKI Yuichiro
Faculty of Engineering, Nagaoka University of Technology
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NISHIYAMA Hiroshi
Faculty of Engineering, Nagaoka University of Technology
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AKAHANE Tadashi
Faculty of Engineering, Nagaoka University of Technology
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Ooshima Yutaka
Faculty Of Engineering Nagaoka University Of Technology
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Akahane T
Faculty Of Engineering Nagaoka University Of Technology
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Akahane Tadashi
Faculty Of Engineering Nagaoka University Of Technology
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Takata Masasuke
Faculty Of Engineering Nagaoka University Of Technology
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Kuroki Yuichiro
Faculty Of Engineering Nagaoka University Of Technology
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Nishiyama Hiroshi
Faculty Of Engineering Nagaoka University Of Technology
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