Characteristics of Ge Nanodots Embedded in SiC Layer Fabricated on Si(001)

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概要

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• High-density Ge nanodots embedded in a SiC layer were fabricated on a 2°-off-surface Si(001) wafer using monomethylgermane (MMGe) and monomethylsilane (MMSi). Using MMGe and MMSi for the Ge nanodot and capping layer formation, respectively, low-temperature fabrication of the Ge nanodots with high density and small diameter and a SiC capping layer was successfully performed. The structural changes in the Si surface during the nanodot formation and after the formation of the SiC capping layer were observed using reflection high-energy electron diffraction (RHEED) and by scanning tunneling microscopy (STM). By X-ray photoelectron spectroscopy (XPS), the coexistence of Ge dots and SiC dots was confirmed, and the ratio of Ge dots to SiC dots was determined to be approximately 1 to 2. Relatively strong photoluminescence at approximately 1.04 eV was observed at 34 K.

• 2009-08-25

著者

• Yasui Kanji

  Faculty Of Engineering Nagaoka University Of Technology

• Akahane Tadashi

  Faculty Of Engineering Nagaoka University Of Technology

• Takata Masasuke

  Faculty Of Engineering Nagaoka University Of Technology

• Nishiyama Hiroshi

  Faculty Of Engineering Nagaoka University Of Technology

• Inoue Yasunobu

  Faculty of Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan

• Suto Haruki

  Faculty of Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan

• Kuroda Tomoyoshi

  Faculty of Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan

• Yasui Kanji

  Faculty of Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan

• Akahane Tadashi

  Faculty of Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan

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