Surface Structure Formed by the Reaction of Monomethylgermane on Si(001) Surface
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概要
- 論文の詳細を見る
The surface reaction of monomethylgermane (MMGe) on a 2°-off-surface Si(001) wafer and the subsequent nanodot formation were analyzed at an atomic scale by scanning tunneling microscopy (STM) and reflection high-energy electron diffraction (RHEED). By nucleation after the formation of a $c(4\times 4)$ surface structure, which is formed by carbon diffusion into the surface layer, uniform high-density nanodots of $9\times 10^{11}$ cm-2 density and 9 nm average diameter were successfully formed. By X-ray photoelectron spectroscopy (XPS), the coexistence of Ge–Ge (or Ge–Si) and Si–C bonds was confirmed, and in particular, the Ge–Ge (or Ge–Si) bonds were confirmed to exist on the surface layer by angle-resolved XPS.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-03-25
著者
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Yasui Kanji
Faculty Of Engineering Nagaoka University Of Technology
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Akahane Tadashi
Faculty Of Engineering Nagaoka University Of Technology
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Takata Masasuke
Faculty Of Engineering Nagaoka University Of Technology
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Nishiyama Hiroshi
Faculty Of Engineering Nagaoka University Of Technology
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Ogiwara Tomoaki
Faculty of Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan
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Kanemaru Tetsushi
Faculty of Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan
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Inoue Yasunobu
Faculty of Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan
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