Design of a Nine-Transistor/Two-Magnetic-Tunnel-Junction-Cell-Based Low-Energy Nonvolatile Ternary Content-Addressable Memory

スポンサーリンク

概要

• 論文の詳細を見る

• Towards a low search-energy nonvolatile ternary content-addressable memory (TCAM), we propose a novel nine-transistor/two-magnetic-tunnel-junction (9T--2MTJ) nonvolatile TCAM cell circuit with a high-speed accessibility. Since critical path for switching in the TCAM cell circuit is only a single metal-oxide-semiconductor (MOS) transistor, switching delay of the TCAM word circuit is minimized. As a result, the worst-case switching delay of 0.22 ns is achieved in a 144-bit word circuit under a 90 nm complementary MOS (CMOS)/MTJ technology, which is about 2.6 times faster than that of a conventional CMOS-based TCAM. In order to minimize the active power dissipation in the proposed TCAM, a multi-level segmented match-line scheme that maximally brings inessential cells to standby state is also applied to the 9T--2MTJ-cell-based word circuit. Finally, low search-energy of 0.73 fJ/bit/search is achieved in a 144-bit \times 256-word nonvolatile TCAM together with eliminating standby power using nonvolatility.

• 2012-02-25

著者

• Endoh Tetsuo

  Center For Interdisciplinary Research Tohoku University

• Ohno Hideo

  Center For Spintronics Integrated Systems Tohoku University

• Katsumata Akira

  Laboratory for Brainware Systems, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan

• Hanyu Takahiro

  Center for Spintronics Integrated Systems, Tohoku University, Sendai 980-8577, Japan

• Matsunaga Shoun

  Center for Spintronics Integrated Systems, Tohoku University, Sendai 980-8577, Japan

• Matsunaga Shoun

  Center for Spintronics Integrated Systems (CSIS), Tohoku University, Sendai 980-8577, Japan

• Natsui Masanori

  Center for Spintronics Integrated Systems, Tohoku University, Sendai 980-8577, Japan

• Hanyu Takahiro

  Center for Spintronics Integrated Systems, Tohoku University

• Natsui Masanori

  Center for Spintronics Integrated Systems, Tohoku University

関連論文

• Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET(Session 7A : Gate Oxides)
• The Analysis of Temperature Dependency of the Mobility In High-k/Metal Gate MOSFET and the Performance on its CMOS Inverter(Session 7A : Gate Oxides)
• The optimum physical targets of the 3-dimensional vertical FG NAND flash memory cell arrays with the extended sidewall control gate (ESCG) structure.(Session 8A : Memory 2)
• The optimum physical targets of the 3-dimensional vertical FG NAND flash memory cell arrays with the extended sidewall control gate (ESCG) structure.(Session 8A : Memory 2)
• Verification of Stable Circuit Operation of 180nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation(Session 7B : Si IC and Circuit Technology)
• The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation(Session 7B : Si IC and Circuit Technology)
• The Analysis of Temperature Dependency of the Mobility In High-k/Metal Gate MOSFET and the Performance on its CMOS Inverter(Session 7A : Gate Oxides)
• Verification of Stable Circuit Operation of 180nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation(Session 7B : Si IC and Circuit Technology)
• The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation(Session 7B : Si IC and Circuit Technology)
• Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
• Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET(Session 7A : Gate Oxides)
• Impact of Floating Body type DRAM with the Vertical MOSFET(Session 8A : Memory 2)
• Impact of Floating Body type DRAM with the Vertical MOSFET(Session 8A : Memory 2)
• Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET(Session 9B : Nano-Scale devices and Physics)
• Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET(Session 9B : Nano-Scale devices and Physics)
• Over 1GHz High-Speed Current Pulse Generation Circuit for Novel Nonvolatile Memory Cells(Session 7B : Si IC and Circuit Technology)
• Over 1GHz High-Speed Current Pulse Generation Circuit for Novel Nonvolatile Memory Cells(Session 7B : Si IC and Circuit Technology)
• Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
• Study on Quantum Electro-Dynamics in Vertical MOSFET
• Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
• Sub-10nm Multi-Nano-Pillar Type Vertical MOSFET
• Design of 30nm FinFETs and Double Gate MOSFETs with Halo Structure
• Design of 30nm FinFET with Halo Structure
• Sub-10nm Multi-Nano-Pillar Type Vertical MOSFET
• Design of 30nm FinFET with Halo Structure
• Sub-10nm Multi-Nano-Pillar Type Vertical MOSFET
• Scalability of Vertical MOSFETs in Sub-10nm generation and its Mechanism(Session5A: Si Devices II)
• Future High Density Memory with Vertical Structured Device Technology
• Novel Concept Dynamic Feedback MCML Technique for High-Speed and High-Gain MCML type D-Flip Flop(Session8A: Si Devices III)
• Novel Concept Dynamic Feedback MCML Technique for High-Speed and High-Gain MCML type D-Flip Flop(Session8A: Si Devices III)
• Portal gas in a patient with acute obstructive cholangitis : report of a case with emphasis on US findings
• Portal-systemic shunt through the right renal vein developing following portal tumor thrombus
• Inflammatory pseudotumor of the spleen : report of a case with emphasis on contrast-enhanced ultrasound findings
• Isolated liver metastasis from a renal cell carcinoma 12 years after nephrectomy : report of a case and literature review
• Marked change in Doppler waveform : report of two cases of subcutaneous hematoma
• Isolated splenic granuloma : report of a case with an emphasis on ultrasound findings
• Study of Self-Heating Phenomena in Si Nano Wire MOS Transistor(Session5A: Si Devices II)
• Study of Self-Heating Phenomena in Si Nano Wire MOS Transistor(Session5A: Si Devices II)
• Impact of 180nm Current Controlled MCML for Realizing Stable Circuit Operations under Threshold Voltage Fluctuations(Session8A: Si Devices III)
• Impact of 180nm Current Controlled MCML for Realizing Stable Circuit Operations under Threshold Voltage Fluctuations(Session8A: Si Devices III)
• Scalability of Vertical MOSFETs in Sub-10nm generation and its Mechanism(Session5A: Si Devices II)
• Fabrication of Silicon Pillar with 25 nm Half Pitch Using New Multiple Double Patterning Technique
• Standby-Power-Free Compact Ternary Content-Addressable Memory Cell Chip Using Magnetic Tunnel Junction Devices
• Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions
• Enhancing Single-Ion Detection Efficiency by Applying Substrate Bias Voltage for Deterministic Single-Ion Doping
• Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots
• Collective Tunneling Model in Charge-Trap-Type Nonvolatile Memory Cell
• Effects of Silicon Source Gas and Substrate Bias on the Film Properties of Si-Incorporated Diamond-Like Carbon by Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition
• Epitaxial Growth of GaN Films by Pulse-Mode Hot-Mesh Chemical Vapor Deposition
• Current Controlled MOS Current Mode Logic with Auto-detection of Threshold Voltage Fluctuation
• Current Controlled MOS Current Mode Logic with Auto-detection of Threshold Voltage Fluctuation
• Study on Quantum Electro-Dynamics in Vertical MOSFET
• The Performance of Magnetic Tunnel Junction Integrated on the Back-End Metal Line of Complimentary Metal–Oxide–Semiconductor Circuits
• Temperature Dependency of Driving Current in High-k/Metal Gate MOSFET and Its Influence on CMOS Inverter Circuit
• Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET
• Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET with 65nm CMOS Process
• The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-Speed Operation
• Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor
• Verification of Stable Circuit Operation of 180nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation
• Wave Packet Dynamics in the Spin Torque Transfer
• Damage Recovery by Reductive Chemistry after Methanol-Based Plasma Etch to Fabricate Magnetic Tunnel Junctions (Special Issue : Dry Process)
• Study on Quantum Electro-Dynamics in Vertical MOSFET
• Dependence of Magnetic Anisotropy in Co_Fe_B_ Free Layers on Capping Layers in MgO-Based Magnetic Tunnel Junctions with In-Plane Easy Axis
• Fabrication Method of Sub-100 nm Metal-Oxide-Semiconductor Field-Effect Transistor with Thick Gate Oxide
• Disturb-Free Three-Dimensional Vertical Floating Gate NAND with Separated-Sidewall Control Gate
• Role of Synthetic Ferrimagnets in Magnetic Tunnel Junctions from Wave Packet Dynamics
• Design of a Nine-Transistor/Two-Magnetic-Tunnel-Junction-Cell-Based Low-Energy Nonvolatile Ternary Content-Addressable Memory
• Time-Resolved Switching Characteristic in Magnetic Tunnel Junction with Spin Transfer Torque Write Scheme
• Electric Field Effect on Magnetization of an Fe Ultrathin Film
• Current Controlled MOS Current Mode Logic with Auto-Detection of Threshold Voltage Fluctuation
• Current-Induced Domain Wall Motion in Perpendicularly Magnetized Co/Ni Nanowire under In-Plane Magnetic Fields
• Low Power Nonvolatile Counter Unit with Fine-Grained Power Gating
• A Schmitt Trigger Based SRAM with Vertical MOSFET
• High-Density and Low-Power Nonvolatile Static Random Access Memory Using Spin-Transfer-Torque Magnetic Tunnel Junction
• Source/Drain Engineering for High Performance Vertical MOSFET
• Multi-Electron Wave Packet Dynamics in Applied Electric Field
• Future High Density Memory with Vertical Structured Device Technology
• Design and Fabrication of a One-Transistor/One-Resistor Nonvolatile Binary Content-Addressable Memory Using Perpendicular Magnetic Tunnel Junction Devices with a Fine-Grained Power-Gating Scheme
• Low Frequency Noise Characterization in Metal Oxide Semiconductor Field Effect Transistor Based Charge Transfer Device at Room and Low Temperatures
• Influence of Coulomb Blockade on Wave Packet Dynamics in Nanoscale Structures
• CoNi Films with Perpendicular Magnetic Anisotropy Prepared by Alternate Monoatomic Layer Deposition
• Fabrication of a Magnetic Tunnel Junction-Based 240-Tile Nonvolatile Field-Programmable Gate Array Chip Skipping Wasted Write Operations for Greedy Power-Reduced Logic Applications
• A 71%-Area-Reduced Six-Input Nonvolatile Lookup-Table Circuit Using a Three-Terminal Magnetic-Tunnel-Junction-Based Single-Ended Structure

もっと見る 閉じる

スポンサーリンク