A 71%-Area-Reduced Six-Input Nonvolatile Lookup-Table Circuit Using a Three-Terminal Magnetic-Tunnel-Junction-Based Single-Ended Structure

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概要

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• A single-ended circuit using three-terminal magnetic tunnel junction (3T-MTJ) devices is proposed for a compact nonvolatile lookup-table (NV-LUT) circuit. The use of 3T-MTJ devices makes a high tunnel magneto-resistance ratio used in the circuit, because read-current path is separated from the write-current path. By utilizing single-ended circuit structure, the NV-LUT circuit becomes quite simple without reference circuit. In fact, the effective area of the proposed 6-input NV-LUT circuit is only 29% the size of the corresponding CMOS-based implementation using two-terminal-MTJ-based nonvolatile static random access memory cells, with a simulation program with integrated circuit emphasis (SPICE) simulation under a 90 nm CMOS technology.

• 2013-04-25

著者

• Hanyu Takahiro

  Center for Spintronics Integrated Systems, Tohoku University

• Suzuki Daisuke

  Center for Spintronics Integrated Systems, Tohoku University

• Natsui Masanori

  Center for Spintronics Integrated Systems, Tohoku University

• Lin Yuhui

  Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan

関連論文

• Design of a Nine-Transistor/Two-Magnetic-Tunnel-Junction-Cell-Based Low-Energy Nonvolatile Ternary Content-Addressable Memory
• High-Density and Low-Power Nonvolatile Static Random Access Memory Using Spin-Transfer-Torque Magnetic Tunnel Junction
• Fabrication of a Magnetic Tunnel Junction-Based 240-Tile Nonvolatile Field-Programmable Gate Array Chip Skipping Wasted Write Operations for Greedy Power-Reduced Logic Applications
• A 71%-Area-Reduced Six-Input Nonvolatile Lookup-Table Circuit Using a Three-Terminal Magnetic-Tunnel-Junction-Based Single-Ended Structure

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