Damage Recovery by Reductive Chemistry after Methanol-Based Plasma Etch to Fabricate Magnetic Tunnel Junctions (Special Issue : Dry Process)

スポンサーリンク

概要

• 論文の詳細を見る

著者

• Ohno Hideo

  Center For Spintronics Integrated Systems Tohoku University

• Ikeda Shoji

  Center For Spintronics Integrated Systems Tohoku University

• Kinoshita Keizo

  Center for Spintronics Integrated Systems, Tohoku University

• Yamamoto Tadashi

  ULVAC, Inc., Susono, Shizuoka 410-1231, Japan

• Honjo Hiroaki

  Center for Spintronics Integrated Systems, Tohoku University, Sendai 980-8577, Japan

• Kasai Naoki

  Center for Spintronics Integrated Systems, Tohoku University, Sendai 980-8577, Japan

関連論文

• Portal gas in a patient with acute obstructive cholangitis : report of a case with emphasis on US findings
• Portal-systemic shunt through the right renal vein developing following portal tumor thrombus
• Inflammatory pseudotumor of the spleen : report of a case with emphasis on contrast-enhanced ultrasound findings
• Isolated liver metastasis from a renal cell carcinoma 12 years after nephrectomy : report of a case and literature review
• Marked change in Doppler waveform : report of two cases of subcutaneous hematoma
• Isolated splenic granuloma : report of a case with an emphasis on ultrasound findings
• Damage Recovery by Reductive Chemistry after Methanol-Based Plasma Etch to Fabricate Magnetic Tunnel Junctions (Special Issue : Dry Process)
• Dependence of Magnetic Anisotropy in Co_Fe_B_ Free Layers on Capping Layers in MgO-Based Magnetic Tunnel Junctions with In-Plane Easy Axis
• Design of a Nine-Transistor/Two-Magnetic-Tunnel-Junction-Cell-Based Low-Energy Nonvolatile Ternary Content-Addressable Memory
• Time-Resolved Switching Characteristic in Magnetic Tunnel Junction with Spin Transfer Torque Write Scheme
• Electric Field Effect on Magnetization of an Fe Ultrathin Film
• Current-Induced Domain Wall Motion in Perpendicularly Magnetized Co/Ni Nanowire under In-Plane Magnetic Fields
• High-Density and Low-Power Nonvolatile Static Random Access Memory Using Spin-Transfer-Torque Magnetic Tunnel Junction
• CoNi Films with Perpendicular Magnetic Anisotropy Prepared by Alternate Monoatomic Layer Deposition
• Fabrication of a Magnetic Tunnel Junction-Based 240-Tile Nonvolatile Field-Programmable Gate Array Chip Skipping Wasted Write Operations for Greedy Power-Reduced Logic Applications

もっと見る 閉じる

スポンサーリンク