Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET(Session 9B : Nano-Scale devices and Physics)
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概要
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In this study, we focus on the electron propagation in the V-MOSFET under the different impurity distribution of the pillar from the viewpoint of the quantum electro-dynamics. The impurity distribution in the perpendicular and the propagating cross sections are investigated. The results enable us to obtain the guiding principle to design the V-MOSFET bevond 20nm design rule.
- 2010-06-23
著者
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MURAGUCHI Masakazu
Center for Interdisciplinary Research, Tohoku University
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ENDOH Tetsuo
Center for Interdisciplinary Research, Tohoku University
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Endoh Tetsuo
Center For Interdisciplinary Research Tohoku University
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Muraguchi Masakazu
Center For Interdisciplinary Research Tohoku University
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