Impact of floating body type DRAM with the vertical MOSFET (Silicon devices and materials)
スポンサーリンク
概要
- 論文の詳細を見る
- 2010-06-30
著者
-
ENDOH Tetsuo
Center for Interdisciplinary Research, Tohoku University
-
Norifusa Yuto
Center for Interdisciplinary Research, Tohoku University
関連論文
- Impact of floating body type DRAM with the vertical MOSFET (Silicon devices and materials)
- Impact of floating body type DRAM with the vertical MOSFET (Electron devices)
- Study on impurity distribution dependence of electron-dynamics in vertical MOSFET (Silicon devices and materials)
- Evaluation of 1/f noise characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET (Electron devices)
- Study on impurity distribution dependence of electron-dynamics in vertical MOSFET (Electron devices)
- Sub-10nm Multi-Nano-Pillar Type Vertical MOSFET
- Study on Quantum Electro-Dynamics in Vertical MOSFET
- Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET(Session 7A : Gate Oxides)
- The Analysis of Temperature Dependency of the Mobility In High-k/Metal Gate MOSFET and the Performance on its CMOS Inverter(Session 7A : Gate Oxides)
- The optimum physical targets of the 3-dimensional vertical FG NAND flash memory cell arrays with the extended sidewall control gate (ESCG) structure.(Session 8A : Memory 2)
- The optimum physical targets of the 3-dimensional vertical FG NAND flash memory cell arrays with the extended sidewall control gate (ESCG) structure.(Session 8A : Memory 2)
- Verification of Stable Circuit Operation of 180nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation(Session 7B : Si IC and Circuit Technology)
- The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation(Session 7B : Si IC and Circuit Technology)
- The Analysis of Temperature Dependency of the Mobility In High-k/Metal Gate MOSFET and the Performance on its CMOS Inverter(Session 7A : Gate Oxides)
- Verification of Stable Circuit Operation of 180nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation(Session 7B : Si IC and Circuit Technology)
- The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation(Session 7B : Si IC and Circuit Technology)
- Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
- Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET(Session 7A : Gate Oxides)
- Impact of Floating Body type DRAM with the Vertical MOSFET(Session 8A : Memory 2)
- Impact of Floating Body type DRAM with the Vertical MOSFET(Session 8A : Memory 2)
- Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET(Session 9B : Nano-Scale devices and Physics)
- Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET(Session 9B : Nano-Scale devices and Physics)
- Over 1GHz High-Speed Current Pulse Generation Circuit for Novel Nonvolatile Memory Cells(Session 7B : Si IC and Circuit Technology)
- Over 1GHz High-Speed Current Pulse Generation Circuit for Novel Nonvolatile Memory Cells(Session 7B : Si IC and Circuit Technology)
- Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
- Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
- Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
- Study on Quantum Electro-Dynamics in Vertical MOSFET
- Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
- Sub-10nm Multi-Nano-Pillar Type Vertical MOSFET
- Design of 30nm FinFETs and Double Gate MOSFETs with Halo Structure
- Design of 30nm FinFET with Halo Structure
- Sub-10nm Multi-Nano-Pillar Type Vertical MOSFET
- Design of 30nm FinFET with Halo Structure
- Sub-10nm Multi-Nano-Pillar Type Vertical MOSFET
- Scalability of Vertical MOSFETs in Sub-10nm generation and its Mechanism(Session5A: Si Devices II)
- Future High Density Memory with Vertical Structured Device Technology
- Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-End Metal Line of CMOS Circuits
- Transient Characteristic of Fabricated Magnetic Tunnel Junction (MTJ) Programmed with CMOS Circuit
- Study of Self-Heating Phenomena in Si Nano Wire MOS Transistor(Session5A: Si Devices II)
- Study of Self-Heating Phenomena in Si Nano Wire MOS Transistor(Session5A: Si Devices II)
- Impact of 180nm Current Controlled MCML for Realizing Stable Circuit Operations under Threshold Voltage Fluctuations(Session8A: Si Devices III)
- Impact of 180nm Current Controlled MCML for Realizing Stable Circuit Operations under Threshold Voltage Fluctuations(Session8A: Si Devices III)
- Scalability of Vertical MOSFETs in Sub-10nm generation and its Mechanism(Session5A: Si Devices II)
- Standby-Power-Free Compact Ternary Content-Addressable Memory Cell Chip Using Magnetic Tunnel Junction Devices
- Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions
- Temperature Dependency of Driving Current in High-k/Metal Gate MOSFET and Its Influence on CMOS Inverter Circuit
- Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET with 65nm CMOS Process
- The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-Speed Operation
- Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor
- Verification of Stable Circuit Operation of 180nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation
- Low Power Nonvolatile Counter Unit with Fine-Grained Power Gating