Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET with 65nm CMOS Process

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概要

• 論文の詳細を見る
• 2011-05-01

著者

• ENDOH Tetsuo

  Center for Interdisciplinary Research, Tohoku University

• Imamoto Takuya

  Center For Interdisciplinary Research Tohoku University

• Endoh Tetsuo

  Center For Interdisciplinary Research Tohoku University

• Endoh Testuo

  Center For Interdisciplinary Research Tohoku University

• Sasaki Takeshi

  Center For Interdisciplinary Research Tohoku University

• Endoh Tetsuo

  Tohoku Univ. Sendai‐shi Jpn

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