Low Power Nonvolatile Counter Unit with Fine-Grained Power Gating

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概要

• 論文の詳細を見る
• 2012-05-01

著者

• ENDOH Tetsuo

  Center for Interdisciplinary Research, Tohoku University

• Endoh Tetsuo

  Center For Interdisciplinary Research Tohoku University

• Endoh Testuo

  Center For Interdisciplinary Research Tohoku University

• OHSAWA Takashi

  Center for Semiconductor Research & Development, Toshiba Corporation

• Togashi Shuta

  Center For Interdisciplinary Research Tohoku University

• Ohsawa Takashi

  Center For Spintronics Integrated Systems Tohoku University

関連論文

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• Study on Quantum Electro-Dynamics in Vertical MOSFET
• Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET(Session 7A : Gate Oxides)
• The Analysis of Temperature Dependency of the Mobility In High-k/Metal Gate MOSFET and the Performance on its CMOS Inverter(Session 7A : Gate Oxides)
• The optimum physical targets of the 3-dimensional vertical FG NAND flash memory cell arrays with the extended sidewall control gate (ESCG) structure.(Session 8A : Memory 2)
• The optimum physical targets of the 3-dimensional vertical FG NAND flash memory cell arrays with the extended sidewall control gate (ESCG) structure.(Session 8A : Memory 2)
• Verification of Stable Circuit Operation of 180nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation(Session 7B : Si IC and Circuit Technology)
• The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation(Session 7B : Si IC and Circuit Technology)
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• The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation(Session 7B : Si IC and Circuit Technology)
• Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
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