Low Frequency Noise Characterization in Metal Oxide Semiconductor Field Effect Transistor Based Charge Transfer Device at Room and Low Temperatures

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概要

• 論文の詳細を見る

• Low-frequency noise in metal oxide semiconductor field effect transistor (MOSFET) based charge transfer devices have been characterized both at room temperature and a low temperature. At room temperature the noise observed in charge transfer operation was found to be comparable to or slightly smaller than the noise in the DC operation of these devices. Furthermore, at 20 K the charge transfer operation showed 25 times larger noise power; also, the noise power in charge transfer operation demonstrated a direct proportionality to gate pulse frequency. These observations have been explained on the basis of change of emission and capture times at interface traps. The results presented here also indicate the significance of reduction in number of traps for accurate charge transfer operation at cryogenic temperatures.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2010-03-25

著者

• Endoh Tetsuo

  Center For Interdisciplinary Research Tohoku University

• Vipul Singh

  Nanosystems Integration Laboratory, Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan

• Tetsuo Endoh

  Center for Interdisciplinary Research, Tohoku University, Aramaki aza Aoba 6-3, Aoba-ku, Sendai 980-8578, Japan

• Singh Vipul

  Nanosystems Integration Laboratory, Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan

• Inokawa Hiroshi

  Nanosystems Integration Laboratory, Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan

• Hiroaki Satoh

  Nanosystems Integration Laboratory, Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan

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