Design of 30nm FinFETs and Double Gate MOSFETs with Halo Structure
スポンサーリンク
概要
- 論文の詳細を見る
- 2010-05-01
著者
-
Yasuda Yukio
Center For Interdisciplinary Research Tohoku University:jst Crest
-
ENDOH Tetsuo
Center for Interdisciplinary Research, Tohoku University
-
SAKUI Koji
Center for Interdisciplinary Research, Tohoku University
-
Sakui Koji
Center For Interdisciplinary Research Tohoku University:jst Crest
-
Endoh Tetsuo
Center For Interdisciplinary Research Tohoku University
-
Sakui Koji
Center For Interdisciplinary Research Tohoku University
-
Yasuda Yukio
Center For Interdisciplinary Research Tohoku University
関連論文
- Impact of floating body type DRAM with the vertical MOSFET (Silicon devices and materials)
- Impact of floating body type DRAM with the vertical MOSFET (Electron devices)
- Study on impurity distribution dependence of electron-dynamics in vertical MOSFET (Silicon devices and materials)
- Evaluation of 1/f noise characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET (Electron devices)
- Study on impurity distribution dependence of electron-dynamics in vertical MOSFET (Electron devices)
- Sub-10nm Multi-Nano-Pillar Type Vertical MOSFET
- Study on Quantum Electro-Dynamics in Vertical MOSFET
- Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET(Session 7A : Gate Oxides)
- The Analysis of Temperature Dependency of the Mobility In High-k/Metal Gate MOSFET and the Performance on its CMOS Inverter(Session 7A : Gate Oxides)
- The optimum physical targets of the 3-dimensional vertical FG NAND flash memory cell arrays with the extended sidewall control gate (ESCG) structure.(Session 8A : Memory 2)