Over 1GHz High-Speed Current Pulse Generation Circuit for Novel Nonvolatile Memory Cells(Session 7B : Si IC and Circuit Technology)

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概要

• 論文の詳細を見る

• In this paper, a new 2 step program method is proposed to realize high speed and low power program operation for novel nonvolatile memory cells. Moreover, over 1GHz high-speed current pulse generation circuit is proposed which is capable of realizing the proposed 2 step program method. The operation of designed over 1GHz high-speed current pulse generation circuit with 90 nm CMOS process is investigated by HSPICE simulations. The proposed 2 step program method and the designed over 1GHz high-speed current pulse generation circuit with 90 nm CMOS process can be applied to all the novel nonvolatile memories on which the program operation is performed by injecting current, such as PRAM, RRAM, MRAM, STTRAM, and etc.

• 2010-06-23

著者

• ENDOH Tetsuo

  Center for Interdisciplinary Research, Tohoku University

• Imamoto Takuya

  Center for Interdisciplinary Research, Tohoku University

• Na Hyoungjun

  Center for Interdisciplinary Research, Tohoku University

• Suzuki Yasuhiko

  Center for Interdisciplinary Research, Tohoku University

• Endoh Tetsuo

  Center For Interdisciplinary Research Tohoku University

• Suzuki Yasuhiko

  Center For Interdisciplinary Research Tohoku University

• Na Hyoungjun

  Center For Interdisciplinary Research Tohoku University

• Endoh Tetsuo

  Center for Interdisciplinary Research, Tohoku University:Center for Spintronics Integrated Systems, Tohoku University

• Iwamoto Takuya

  Center for Interdisciplinary Research, Tohoku University

• Imamoto Takuya

  Center for Interdisciplinary Research, Tohoku University:Center for Spintronics Integrated Systems, Tohoku University

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