Study on impurity distribution dependence of electron-dynamics in vertical MOSFET (Electron devices)
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概要
- 論文の詳細を見る
- 2010-06-30
著者
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MURAGUCHI Masakazu
Center for Interdisciplinary Research, Tohoku University
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ENDOH Tetsuo
Center for Interdisciplinary Research, Tohoku University
関連論文
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- Study on impurity distribution dependence of electron-dynamics in vertical MOSFET (Electron devices)
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- The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation(Session 7B : Si IC and Circuit Technology)
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- Verification of Stable Circuit Operation of 180nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation(Session 7B : Si IC and Circuit Technology)
- The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation(Session 7B : Si IC and Circuit Technology)
- Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
- Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET(Session 7A : Gate Oxides)
- Impact of Floating Body type DRAM with the Vertical MOSFET(Session 8A : Memory 2)
- Impact of Floating Body type DRAM with the Vertical MOSFET(Session 8A : Memory 2)
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- Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET(Session 9B : Nano-Scale devices and Physics)
- Over 1GHz High-Speed Current Pulse Generation Circuit for Novel Nonvolatile Memory Cells(Session 7B : Si IC and Circuit Technology)
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- Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
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- Future High Density Memory with Vertical Structured Device Technology
- Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-End Metal Line of CMOS Circuits
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