Verification of Stable Circuit Operation of 180nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation(Session 7B : Si IC and Circuit Technology)
スポンサーリンク
概要
- 論文の詳細を見る
We have succeeded in the verification of stable circuit operation of 180nm Current Controlled MOS Current Mode Logic (CC-MCML) under threshold voltage fluctuations by measurement. The performance stability of the CC-MCML inverter under the fluctuations of threshold voltage of NMOS and PMOS is evaluated from the viewpoint of diminishing the bias offset voltage ΔV_B. The ΔV_B, that is defined as (base voltage of output waveform) - (base voltage of input waveform), is a key design parameter for differential circuit. It is shown that when the threshold voltage of NMOS fluctuates in the range of 0.53V to 0.69V, and threshold voltage of PMOS fluctuates in the range of-0.47V to -0.67V, the CC-MCML technique is able to suppress ΔV_B within only 30mV, where as the conventional MCML technique caused maximum ΔV_B of 1.0V. In this paper, it is verified for the first time that the proposed CC-MCML is more tolerant against the fluctuations of threshold voltages than the conventional MCML.
- 2010-06-23
著者
-
ENDOH Tetsuo
Center for Interdisciplinary Research, Tohoku University
-
Kamiyanagi Masashi
Center for Interdisciplinary Research, Tohoku University
-
Imamoto Takuya
Center for Interdisciplinary Research, Tohoku University
-
Sasaki Takeshi
Center for Interdisciplinary Research, Tohoku University
-
Na Hyoungjun
Center for Interdisciplinary Research, Tohoku University
-
Imamoto Takuya
Center For Interdisciplinary Research Tohoku University
-
Endoh Tetsuo
Center For Interdisciplinary Research Tohoku University
-
Sasaki Takeshi
Center For Interdisciplinary Research Tohoku University
-
Na Hyoungjun
Center For Interdisciplinary Research Tohoku University
-
Kamiyanagi Masashi
Center For Interdisciplinary Research Tohoku University
-
Iwamoto Takuya
Center for Interdisciplinary Research, Tohoku University
関連論文
- Impact of floating body type DRAM with the vertical MOSFET (Silicon devices and materials)
- Impact of floating body type DRAM with the vertical MOSFET (Electron devices)
- Study on impurity distribution dependence of electron-dynamics in vertical MOSFET (Silicon devices and materials)
- Evaluation of 1/f noise characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET (Electron devices)
- Study on impurity distribution dependence of electron-dynamics in vertical MOSFET (Electron devices)
- Sub-10nm Multi-Nano-Pillar Type Vertical MOSFET
- Study on Quantum Electro-Dynamics in Vertical MOSFET
- Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET(Session 7A : Gate Oxides)
- The Analysis of Temperature Dependency of the Mobility In High-k/Metal Gate MOSFET and the Performance on its CMOS Inverter(Session 7A : Gate Oxides)
- The optimum physical targets of the 3-dimensional vertical FG NAND flash memory cell arrays with the extended sidewall control gate (ESCG) structure.(Session 8A : Memory 2)