A two-transistor bootstrap type selective device for spin-transfer-torque magnetic tunnel junctions

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概要

• 論文の詳細を見る
• Institute of Physicsの論文
• 2014-02-12

著者

• OHSAWA Takashi

  Center for Semiconductor Research & Development, Toshiba Corporation

関連論文

• Overview and Future Challenges of Floating Body RAM Technologies
• Low Power Nonvolatile Counter Unit with Fine-Grained Power Gating
• High-Density and Low-Power Nonvolatile Static Random Access Memory Using Spin-Transfer-Torque Magnetic Tunnel Junction
• A two-transistor bootstrap type selective device for spin-transfer-torque magnetic tunnel junctions

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