東北大学大学院 工学研究科 材料化学専攻 量子無機材料化学講座 量子材料化学分野 遠藤研究室

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概要

• 論文の詳細を見る
• 2001-02-20

著者

• Sasaki Takeshi

  Center For Interdisciplinary Research Tohoku University

• 佐々木 剛

  東北大学大学院工学研究科材料化学専攻

関連論文

• Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET(Session 7A : Gate Oxides)
• The Analysis of Temperature Dependency of the Mobility In High-k/Metal Gate MOSFET and the Performance on its CMOS Inverter(Session 7A : Gate Oxides)
• Verification of Stable Circuit Operation of 180nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation(Session 7B : Si IC and Circuit Technology)
• The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation(Session 7B : Si IC and Circuit Technology)
• The Analysis of Temperature Dependency of the Mobility In High-k/Metal Gate MOSFET and the Performance on its CMOS Inverter(Session 7A : Gate Oxides)
• Verification of Stable Circuit Operation of 180nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation(Session 7B : Si IC and Circuit Technology)
• The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation(Session 7B : Si IC and Circuit Technology)
• Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET(Session 7A : Gate Oxides)
• SF-073-5 癌治療標的分子としてのp27/kip1の有用性 : p27/kip1の新規機能から検討
• 変異型p27kipl組み込みアデノウイルスベクターを用いた乳癌の遺伝子治療への展望
• OP-3-040 変異型p27 / kip1蛋白分解抑制による胆管癌細胞株に対するアポトーシスの増強
• L1_2型構造を有する新規強磁性金属間化合物Mn_3Geの合成
• 東北大学大学院 工学研究科 材料化学専攻 量子無機材料化学講座 量子材料化学分野 遠藤研究室
• Temperature Dependency of Driving Current in High-k/Metal Gate MOSFET and Its Influence on CMOS Inverter Circuit
• Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET with 65nm CMOS Process
• The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-Speed Operation
• Verification of Stable Circuit Operation of 180nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation

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