Norifusa Yuto | Center for Interdisciplinary Research, Tohoku University
スポンサーリンク
概要
関連著者
-
ENDOH Tetsuo
Center for Interdisciplinary Research, Tohoku University
-
Norifusa Yuto
Center for Interdisciplinary Research, Tohoku University
-
Endoh Tetsuo
Center For Interdisciplinary Research Tohoku University
-
Norifusa Yuto
Center For Interdisciplinary Research Tohoku University
-
Kamiyanagi Masashi
Center for Interdisciplinary Research, Tohoku University
-
Endoh Tetsuo
Tohoku Univ. Sendai‐shi Jpn
-
Tanaka Kousuke
Center For Interdisciplinary Research Tohoku University
-
Koyanagi Mitsumasa
Dept. Of Bioengineering And Robotics Graduate School Of Engineering Tohoku University
-
Kamiyanagi Masashi
Center For Interdisciplinary Research Tohoku University
-
Koyanagi Mitsumasa
Dept. Of Bioengineering And Robotics Tohoku University
-
Norifusa Yuto
Center For Interdisciplinary Research Tohoku University:jst-crest
-
Endoh Tetsuo
Center For Interdisciplinary Research Tohoku University:jst-crest
著作論文
- Impact of floating body type DRAM with the vertical MOSFET (Silicon devices and materials)
- Impact of floating body type DRAM with the vertical MOSFET (Electron devices)
- Impact of Floating Body type DRAM with the Vertical MOSFET(Session 8A : Memory 2)
- Impact of Floating Body type DRAM with the Vertical MOSFET(Session 8A : Memory 2)
- Scalability of Vertical MOSFETs in Sub-10nm generation and its Mechanism(Session5A: Si Devices II)
- Study of Self-Heating Phenomena in Si Nano Wire MOS Transistor(Session5A: Si Devices II)
- Study of Self-Heating Phenomena in Si Nano Wire MOS Transistor(Session5A: Si Devices II)
- Impact of 180nm Current Controlled MCML for Realizing Stable Circuit Operations under Threshold Voltage Fluctuations(Session8A: Si Devices III)
- Impact of 180nm Current Controlled MCML for Realizing Stable Circuit Operations under Threshold Voltage Fluctuations(Session8A: Si Devices III)
- Scalability of Vertical MOSFETs in Sub-10nm generation and its Mechanism(Session5A: Si Devices II)