Suemitsu Tetsuya | Research Institute Of Electrical Communication Tohoku University
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概要
- SUEMITSU Tetsuyaの詳細を見る
- 同名の論文著者
- Research Institute Of Electrical Communication Tohoku Universityの論文著者
関連著者
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Suemitsu Tetsuya
Research Institute Of Electrical Communication Tohoku University
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Otsuji Taiichi
Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Suemitsu Tetsuya
Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan
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Otsuji Taiichi
Research Institute Of Electrical Communication Tohoku University
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Fukidome Hirokazu
Research Center For Photoenergetics Of Organic Materials Osaka University
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Handa Hiroyuki
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Suemitsu Maki
Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan
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Handa Hiroyuki
Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan
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El Moutaouakil
Research Institute Of Electrical Communication Tohoku University
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Kang Hyun-Chul
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Suemitsu Tetsuya
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Kang Hyun-Chul
Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan
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El Moutaouakil
Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan
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Suemitsu Maki
Research Institute Of Electrical Communication Tohoku University
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EL MOUTAOUAKIL
Research Institute of Electrical Communication, Tohoku University
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KOMORI Tsuneyoshi
Research Institute of Electrical Communication, Tohoku University
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HORIIKE Kouhei
Research Institute of Electrical Communication, Tohoku University
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Horiike Kouhei
Research Institute Of Electrical Communication Tohoku University
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Komori Tsuneyoshi
Research Institute Of Electrical Communication Tohoku University
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Takahashi Ryota
Research Institute Of Electrical Communications Tohoku University
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DEL ALAMO
Massachusetts Institute of Technology
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del Alamo
Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
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Olac-vaw Roman
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Karasawa Hiromi
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Miyamoto Yu
Research Institute of Electrical Communications, Tohoku University, Sendai 980-8577, Japan
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Suemitsu Maki
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Fukidome Hirokazu
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Jung Myung-Ho
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Kim Dae-Hyun
Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
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Fukuda Shunsuke
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Otsuji Taiichi
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Takahashi Ryota
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Sano Eiichi
JST--CREST Japan Science and Technology Agency, Chiyoda, Tokyo 102-8666, Japan
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Suemitsu Tetsuya
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Fukidome Hirokazu
Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan
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Handa Hiroyuki
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Suemitsu Maki
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
著作論文
- Room Temperature Logic Inverter on Epitaxial Graphene-on-Silicon Device
- Investigation of Graphene Field Effect Transistors with Al2O3 Gate Dielectrics Formed by Metal Oxidation
- Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems
- Erratum: “Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates”
- Analysis of Gate Delay Scaling in In0.7Ga0.3As-Channel High Electron Mobility Transistors