Selective Oxidation of AlGaAs for Photonic Crystal Laser
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概要
- 論文の詳細を見る
We investigated the feasibility of the selective oxidation of AlGaAs for a novel laser diode (LD) made of two-dimensional photonic crystal (PC). The oxidation was successfully performed in an array of small and deep air holes without any unexpected phenomenon. The oxidation extent was uniform vertically and horizontally around the air holes. It was not affected by crystallographic orientation or steam gas flow direction. Thus, there are no significant difficulties in fabricating the device structures of the proposed PC-LD by selective oxidation.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2009-05-25
著者
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Kondow Masahiko
Department Of Electrical And Computer Engineering University Of California:central Research Laborato
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Kondow Masahiko
Department of Quantum Electronic Device Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Kawano Takayuki
Departemtn of Neurorsurgery, Kumamoto University School of Medicine
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Kawano Takayuki
Department of Quantum Electronic Device Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Momose Hideki
Department of Quantum Electronic Device Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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