Chemical Beam Etching of GaAs Using a Novel Precursor of Tertiarybutylchloride (TBCl)

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概要

• 論文の詳細を見る

• We examined systematically in situ etching with a novel precursor, tertiarybutylchloride (TBCl) in a chemical beam epitaxy system. Reflection high-energy electron diffraction observation revealed that layer-by-layer etching was achieved. While the etching temperature is slightly higher than that for AsCl_3 or AsBr_3, it is still in the range applicable in III-V semiconductor device fabrication. Furthermore, because TBCl is not corrosive to stainless steel or seat materials for valves and has long-term stability at room temperature, it is a promising alternative to AsCl_3 or AsBr_3 from the viewpoint of safety to operators as well as the growth system.

• 社団法人応用物理学会の論文
• 1999-06-15

著者

• Kondow Masahiko

  Department Of Electrical And Computer Engineering University Of California:central Research Laborato

• SHI Binqiang

  Department of Electrical and Computer Engineering, University of California

• TU Charles

  Department of Electrical and Computer Engineering, University of California

• Tu Charles

  Department Of Electrical And Computer Engineering University Of California

• Shi Binqiang

  Department Of Electrical And Computer Engineering University Of California

関連論文

• Infrared Absorption Spectrum of InNP
• Determination of exciton binding energy of GaInNAs quantum well structures by piezoelectric photothermal spectroscopy compared with photoreflectance measurements (Special issue: Microprocesses and nanotechnology)
• Chemical Beam Etching of GaAs Using a Novel Precursor of Tertiarybutylchloride (TBCl)
• Detection of Photogenerated Carrier Leakage from GaInNAs/GaAs Single Quantum Well by Piezoelectric Photothermal Spectroscopy
• Selective Oxidation of AlGaAs for Photonic Crystal Laser

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