Combinatorial Fabrication and Characterization of Ternary La2O3–Mn2O3–Co3O4 Composition Spreads
スポンサーリンク
概要
- 論文の詳細を見る
We describe the screening of large combinatorial oxide libraries for determining their electric transport characteristics. Complete full ternary composition spreads of La2O3–Mn2O3–Co3O4 oxide alloys were deposited onto single conducting Nb-doped SrTiO3 substrates by the pulsed laser deposition technique incorporating a moving shutter and a rotating substrate holder. The electrical resistance of the spreads was determined using a custom-designed scanning conducting probe. We found that a single electrically conducting area in the ternary spread develops into two branches to LaMnO3 perovskites close to the ideal LaMnO3 stoichiometry and to a wide La0.65Co0.35OX–La0.20Co0.80OX system with perovskite-related structures. We also discovered that compositions along the tie line [La0.20Co0.65Mn0.15OX–La0.57Co0.20Mn0.23OX] exhibit the weakest temperature dependence and therefore could be used in fabricating of stable thin film resistors and gas sensors.
- 2005-08-15
著者
-
Ohuchi Fumio
University of Washington
-
Ahmet Parhat
National Institute For Material Science
-
Chikyow Toyohiro
National Inst. Materials Sci. Ibaraki Jpn
-
Kukuruznyak Dmitry
National Institute For Materials Science Advanced Electronic Materials Center Advanced Device Materi
-
Chikyow Toyohiro
National Institute for Materials Science, Nano-Materials Assembly Group, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
-
Ahmet Parhat
National Institute for Materials Science, Nano-Materials Assembly Group, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
-
Ohuchi Fumio
University of Washington, Materials Science and Engineering Department, Box 352120, Seattle, WA 98195, U.S.A.
-
Yamamoto Atsushi
Advanced Industrial Science and Technology Institute (AIST), Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Kukuruznyak Dmitry
National Institute for Materials Science, Nano-Materials Assembly Group, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
関連論文
- Magneto-Optical Spectroscopy of Anatase TiO_2 Doped with Co
- NF_3とSi基板の相互作用:密度汎関数法による検討
- High-resolution RBS analysis of Si-dielectrics interfaces
- Heteroepitaxial Growth of Rutile TiO_2 on GaN(0001) by Pulsed Laser Deposition
- Rapid Synthesis and Scanning Probe Analysis of Ba_xSr_TiO_3 Composition Spread Films on a Temperature Gradient Si(100) Substrate : Electrical Properties of Condensed Matter
- Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-K MISFET with p+poly-Si Gates : A Theoretical Approach
- Epitaxial Growth of GaN Film on (La,Sr)(Al,Ta)_O3 (111) Substrate by Metalorganic Chemical Vapor Deposition
- Epitaxial Growth of the Wurtzite (112^^-0) AlN Thin Films on Si(100) with MnS Buffer Layer : Semiconductors
- Room-Temperature Epitaxial Growth of CeO_2 Thin Films on Si(111) Substrates for Fabrication of Sharp Oxide/Silicon Interface
- GaN Film Fabrication by Near-Atmospheric Plasma-Assisted Chemical Vapor Deposition
- MBE Growth Method for Pyramid-Shaped GaAs Micro Crystals on ZnSe(001) Surface Using Ga Droplets
- Influence of Internal Electric Field on the Recombination Dynamics of Localized Excitons in an InGaN Double-Quantum-Well Laser Diode Wafer Operated at 450nm
- Microscopic Effect of Nitrogen Doping on Dielectric Constant of Hf-silicate
- Material Research on High-Quality Passivation Layers with Controlled Fixed Charge for Crystalline Silicon Solar Cells
- General Guidelines for the Heteroepitaxial Thin Film Growth Established by Combinatorial X-ray Diffraction
- Formation of Self-Assembled Nanocrystalline Silicon Dots SiC14/H2 RF Plasma-Enhanced Chemical Vapor Deposition : Semiconductors
- High-Quality p-Type ZnO Films Grown by Co-Doping of N and Te on Zn-Face ZnO Substrates
- Sulfide and Oxide Heterostructures For the SrTiO3 Thin Film Growth on Si and Their Structural and Interfacial Stabilities
- Crystal Structures of Pt–Ru Alloy Schottky Contacts on ZnO by Combinatorial Ion Beam Deposition
- Hafnium 4f Core-level Shifts Caused by Nitrogen Incorporation in Hf-based High-$k$ Gate Dielectrics
- Role of Nitrogen Incorporation into Hf-Based High-$k$ Gate Dielectrics for Termination of Local Current Leakage Paths
- Combinatorial Fabrication and Characterization of Ternary La2O3–Mn2O3–Co3O4 Composition Spreads
- Heteroepitaxy of Hexagonal ZnS Thin Films Directly on Si (111)
- Effects of Single-Crystalline GaN Target on GaN Thin Films in Pulsed Laser Deposition Process
- Magneto-Optical Spectroscopy of Anatase TiO2 Doped with Co