Large Magnetoresistance in Magnetic Tunnel Junctions Using Co-Mn-Al Full Heusler Alloy
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概要
- 論文の詳細を見る
Magnetic tunnel junctions with a stacking structure of Cr/Co-Mn-Al/Al-O/Co-Fe/Ir-Mn were fabricated using a UHV magnetron-sputtering machine. Co-Mn-Al films showed B2 structure, which involves partial disorder between Mn and Al sites. Tunnel magnetoresistance ratios at room temperature were 27% and 40% before and after annealing at 250°C, respectively. Those values are much higher than the ones obtained in previous experiments using half Heusler alloys.
- Japan Society of Applied Physicsの論文
- 2004-07-15
著者
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KUBOTA Hitoshi
Department of Applied Physics, Graduate School of Engineering, Tohoku University
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Oogane Mikihiko
Department Of Applied Physics Graduate School Of Engineering Tohoku University
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Ando Yasuo
Department Of Applied Physics Graduate School Of Engineering Tohoku University
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Nakata Jun
Department Of Applied Physics Graduate School Of Engineering Tohoku University
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Sakuma Akimasa
Department Of Applied Physics Graduate School Of Engineering Tohoku University
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Miyazaki Terunobu
Department Of Applied Physics Faculty Of Engineering Tohoku University
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Ando Yasuo
Department of Applied Physics, Graduate School of Engineering, Tohoku University, Aoba-yama 05, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Oogane Mikihiko
Department of Applied Physics, Graduate School of Engineering, Tohoku University, Aoba-yama 05, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Kubota Hitoshi
Department of Applied Physics, Graduate School of Engineering, Tohoku University, Aoba-yama 05, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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