Magnetoresistance and Dipole Shift of Ultrasmall Magnetic Tunnel Junctions Characterized by Conducting Atomic Force Microscopy : Magnetism

概要

論文の詳細を見る
Conducting atomic force microscopy was used for the characterization of magnetic tunnel junctions with various areas down to a minimum of 0.0025μm2 and a tunnel magnetoresistance (TMR) value up to 20%. Minor loops of large junctions show jumps of the resistance, which can be related to magnetic domains formation in the ferromagnetic electrodes. For the smallest junctions, a TMR signal between 10% and 17% was obtained. The range of TMR values increased with decreasing junction sizes. The minor loops of such small junctions did not show hints of domains. We observed, however, a shift of the minor loop in the opposite direction as obtained for larger junctions, which can be related to dipolar antiferromagnetic coupling of the ferromagnetic electrodes.
社団法人応用物理学会の論文
2002-02-15