Enhancement of Tunnel Magnetoresistance Effect on Junction with Co Cluster Layers in Coulomb Blockade Regime
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概要
- 論文の詳細を見る
Tunnel magnetoresistance (TMR) effect in ferromagnet/granular/ferromagnet (FM/GR/FM) tunnel junctions was studied, where GR=Al-O/Co/Al-O or Al-O/Co/Al-O/Co/Al-O. The magnetoresistance (MR) ratio and the resistance of the latter junction increased with decreasing bias voltage at low temperatures. These increases should be due to the cotunneling effect in the Coulomb blockade regime. In contrast, the MR ratio of the former junction exhibited a maximum of 14% near 40 mV and decreased to 10% at 1 mV. The increase of resistance in the former junction at a lower voltage was smaller than that in the latter junction. The difference was discussed using a simple model.
- 社団法人応用物理学会の論文
- 1999-08-15
著者
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遠藤 康夫
高エ研
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KUBOTA Hitoshi
Department of Applied Physics, Graduate School of Engineering, Tohoku University
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Endoh Yasuo
Physics Department Granduate School Of Science Tohoku University
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Ando Yasuo
Department Of Applied Physics Graduate School Of Engineering Tohoku University
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Endoh Yasuo
Physics Department Tohoku University
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Miyazaki Terunobu
Department Of Applied Physics Faculty Of Engineering Tohoku University
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Ando Y
Tokyo Univ. Information Sci. Chiba Jpn
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Fukumoto Yoshiyuki
Department Of Applied Physics Graduate School Of Engineering Tohoku University
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