Dynamic Magnetic Intermediate State during Nanosecond Spin Transfer Switching for MgO-Based Magnetic Tunnel Junctions
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概要
- 論文の詳細を見る
We report for the first time that the dynamic magnetic intermediate state (DMI) was observed at a speed of several ns during spin transfer switching for MgO-based magnetic tunnel junctions (MTJs). The DMI was observed as slow resistance oscillation at the center of the parallel to anti-parallel state by single shot time domain measurements. The DMI is observable at certain current amplitudes. The outbreak probability decreases with further current increase. We concluded that the DMI originates from inhomogeneous magnetization behavior. On the other hand, previous single shot time domain measurements have shown only for single-domain-like magnetization behavior.
- Japan Society of Applied Physicsの論文
- 2010-05-25
著者
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遠藤 康夫
高エ研
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Endoh Yasuo
Core Research For Evolutional Science And Technology (jrcat) : Department Of Physics Tohoku Universi
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Endoh Yasuo
Physics Department Granduate School Of Science Tohoku University
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Ando Yuji
Department Of Applied Physics The University Of Tokyo
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Endoh Yasuo
Institute For Materials Research Tohoku University
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Endoh Yasuo
Physics Department Tohoku University
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Aoki Tatsuya
Graduate School Of Engineering Tohoku University
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NAGANUMA Hiroshi
Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST)
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Ando Yasuo
Graduate School Of Engineering Tohoku University
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Naganuma Hiroshi
Graduate School Of Engineering Tohoku University
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Oogane Mikihiko
Graduate School Of Engineering Tohoku University
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Ando Y
Tokyo Univ. Information Sci. Chiba Jpn
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