Anomalous Anisotropic Magnetoresistance in Pseudo-Single-Crystal $\gamma'$-Fe4N Films
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概要
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The negative anisotropic magnetoresistance (AMR) effect is observed in pseudo-single-crystal $\gamma'$-Fe4N films from 4 to 300 K. Below 50 K, the changes in the AMR ratio depend on the crystal direction along which the sensing current flows. A large stepwise change of the AMR ratio is observed along the [100] direction. The anomalous $\cos(4\theta)$ component appears on the AMR curves below 30 K. A first-principles calculation of $\gamma'$-Fe4N indicates that the electron occupation of the 3d orbitals is modified as the magnetic moment direction changes with respect to the crystal axes. The anomalous behavior of the AMR effect might be due to the change of the partial density of states of 3d-orbitals at the Fermi level.
- 2010-11-25
著者
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TAKAHASHI HIROKAZU
Department of Gastroenterology, Yokohama City University School of Medicine
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Tsunoda Masakiyo
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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Sakuma Akimasa
Department Of Applied Physics Graduate School Of Engineering Tohoku University
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TAKAHASHI Migaku
Department of Electronic Engineering, Faculty of Engineering, Tohoku University
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Kokado Satoshi
Faculty Of Engineering Shizuoka University
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Komasaki Yosuke
Department Of Electronic Engineering Tohoku University
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Sakuma Akimasa
Department Of Applied Physics Tohoku University
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Takahashi Migaku
Department Of Electronic Engineering Tohoku University
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Takahashi Hirokazu
Department Of Electrical Engineering Faculty Of Engineering Nagaoka University Of Technology
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Takahashi Migaku
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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TAKAHASHI Hirokazu
Department of Agricultural Chemistry, Faculty of Agriculture, Tohoku University
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