Inverse Current-Induced Magnetization Switching in Magnetic Tunnel Junctions with Fe4N Free Layer
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概要
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Current-induced magnetization switching (CIMS) in CoFeB (pinned layer)/MgO/Fe4N (free layer) magnetic tunnel junctions (MTJs) was investigated at room temperature and an inverse CIMS phenomenon was clearly identified. From the current-field magnetic phase diagram, determined from the dependence of the switching field on the bias current, the direction of spin-transfer torque was found to be opposite to that observed in CoFeB/MgO/CoFeB-MTJs. The inverse CIMS observed in this study cannot be explained only by the conventional theory, which states that the direction of the spin-transfer torque is determined by the sign of the spin polarization of the pinned layer.
- 2010-10-25
著者
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Tsunoda Masakiyo
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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Sakuma Akimasa
Department Of Applied Physics Graduate School Of Engineering Tohoku University
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Isogami Shinji
Department Of Electronic Engineering Tohoku University
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Komasaki Yosuke
Department Of Electronic Engineering Tohoku University
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Sakuma Akimasa
Department Of Applied Physics Tohoku University
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Takahasi Migaku
Department of Electronic Engineering, Tohoku University, 6-6-05 Aza-Aoba, Aramaki, Aoba-ku, Sendai 9
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Takahashi Migaku
Department Of Electronic Engineering Tohoku University
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