Tetragonal D0
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概要
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First-principles calculation of D0<inf>22</inf>Mn<inf>3</inf>Ge shows a fully spin-polarized \Delta_{1} band at the Fermi level, low saturation magnetization M_{\text{S}}=180 emu/cm<sup>3</sup>, high uniaxial magnetic anisotropy K_{\text{u}}=23 Merg/cm<sup>3</sup>, and low Gilbert damping \alpha=9\times 10^{-4}. We also experimentally investigate D0<inf>22</inf>Mn<inf>3+x</inf>Ge epitaxial films grown on MgO(100) substrates with different compositions x. The films exhibit a coercivity of about 20 kOe, M_{\text{S}} of about 130 emu/cm<sup>3</sup>, and K_{\text{u}} of about 10 Merg/cm<sup>3</sup>at x=0.55 (78 at.% Mn). These indicate that D0<inf>22</inf>Mn<inf>3</inf>Ge is a good candidate for spin-transfer-torque random access memory.
- 2013-12-25
著者
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MIYAZAKI Terunobu
WPI Advanced Institute for Materials Research, Tohoku University
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Sakuma Akimasa
Department Of Applied Physics Graduate School Of Engineering Tohoku University
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Mizukami Shigemi
Wpi Advanced Institute For Materials Research Tohoku University
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Kubota Takahide
Wpi Advanced Institute For Materials Research Tohoku University
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Tsuchiura Hiroki
Department Of Applied Physics Graduate School Of Engineering Tohoku University
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Sakuma Akimasa
Department of Applied Physics, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
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Mizukami Shigemi
WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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Sugihara Atsushi
WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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Kondo Yukio
WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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Tsuchiura Hiroki
Department of Applied Physics, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
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