Near-Surface Defects in Boron-Doped Diamond Schottky Diodes Studied From Capacitance Transients
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2008-03-25
著者
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ITO Toshimichi
Graduate School of Biosphere Sciences, Hiroshima University
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Pernot Julien
Univ. Joseph Fourier Grenoble Fra
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Pernot Julien
Institut Neel Cnrs And Universite Joseph Fourier
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Ito Toshimichi
Graduate School Of Engineering Osaka University
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Teraji Tokuyuki
National Inst. For Materials Sci. Ibaraki Jpn
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Teraji Tokuyuki
Sensor Materials Center National Institute For Materials Science
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MURET Pierre
Institut Neel, Centre National de la Recherche Scientifique and Universite Joseph Fourier
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Muret Pierre
Institut Neel Centre National De La Recherche Scientifique And Universite Joseph Fourier
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- Near-Surface Defects in Boron-Doped Diamond Schottky Diodes Studied From Capacitance Transients
- Electric Field Breakdown of Lateral Schottky Diodes of Diamond
- Hillock-Free Homoepitaxial Diamond (100) Films Grown at High Methane Concentrations
- Chemical Vapor Deposition of C Isotopically Enriched Polycrystalline Diamond (SELECTED TOPICS IN APPLIED PHYSICS : Diamond Semiconductors : from Materials to Devices)
- Effective Use of Source Gas for Diamond Growth with Isotopic Enrichment
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- Synchronized B and ¹³C Diamond Delta Structures for an Ultimate In-Depth Chemical Characterization
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