Teraji Tokuyuki | National Inst. For Materials Sci. Ibaraki Jpn
スポンサーリンク
概要
関連著者
-
Teraji Tokuyuki
National Inst. For Materials Sci. Ibaraki Jpn
-
Taniguchi Takashi
National Institute For Materials Science
-
Koizumi Satoshi
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
-
Isoya Junichi
University Of Library And Information Science
-
Koide Yasuo
National Institute For Materials Science (nims)
-
Teraji Tokuyuki
Sensor Materials Center National Institute For Materials Science
-
TERAJI Tokuyuki
Department of Electrical Engineering, Osaka University
-
Teraji Tokuyuki
Department Of Electrical Engineering Graduate School Of Engineering Osaka University
-
KOIZUMI Satoshi
National Institute for Research in Inorganic Materials
-
Koizumi Satoshi
Advanced Materials Laboratory National Institute For Materials Science
-
Fiori Alexandre
Institut Néel, CNRS and Université Joseph Fourier, BP 166, 38042 Grenoble Cedex 9, France
-
Jomard François
GEMaC, CNRS and Université Versailles St Quentin, 45, avenue des Etats-Unis, 78035 Versailles Cedex, France
-
Isoya Junichi
Tsukuba University, Tsukuba, Ibaraki 305-8550, Japan
-
Isoya Junichi
University of Tsukuba, Tsukuba, Ibaraki 305-8550, Japan
-
Gheeraert Etienne
Institut Néel, CNRS and Université Joseph Fourier, BP 166, 38042 Grenoble Cedex 9, France
-
Bustarret Etienne
Institut Néel, CNRS and Université Joseph Fourier, BP 166, 38042 Grenoble Cedex 9, France
-
KOIZUMI Satoshi
National Institute for Materials Science
-
ITO Toshimichi
Department of Electrical Engineering, Faculty of Engineering, Osaka University
-
KOIZUMI Satoshi
Advanced Materials Laboratory, National Institute for Materials Science
-
WATANABE Kenji
Advanced Materials Laboratory, National Institute for Materials Science
-
ITO Toshimichi
Graduate School of Biosphere Sciences, Hiroshima University
-
Pernot Julien
Univ. Joseph Fourier Grenoble Fra
-
Pernot Julien
Institut Neel Cnrs And Universite Joseph Fourier
-
Ito Toshimichi
Department Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka
-
Ito Toshimichi
Graduate School Of Engineering Osaka University
-
Yamaoka Shinobu
Advanced Materials Laboratory National Institute For Materials Science
-
Teraji T
Sensor Materials Center National Institute For Materials Science
-
TANIGUCHI Takashi
Advanced Materials Laboratory, National Institute for Materials Science
-
MURET Pierre
Institut Neel, Centre National de la Recherche Scientifique and Universite Joseph Fourier
-
Muret Pierre
Institut Neel Centre National De La Recherche Scientifique And Universite Joseph Fourier
-
Ito Toshimichi
Osaka Univ. Osaka Jpn
-
HAMADA Mitsuhiro
Department of Electrical Engineering, Graduate School of Engineering, Osaka University
-
Taniguchi Takashi
Advanced Materials Laboratory National Institute For Materials Science
-
Hamada Mitsuhiro
Department Of Electrical Engineering Graduate School Of Engineering Osaka University
-
Watanabe K
Advanced Materials Laboratory National Institute For Materials Science
-
Watanabe Kenji
National Inst. Materials Sci. (nims) Ibaraki Jpn
-
Watanabe Kenji
Advanced Materials Laboratory National Institute For Materials Science
-
KOIZUMI Satoshi
Advanced Science Research Center, Japan Atomic Energy Research Institute
-
Taniguchi Takashi
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
-
Teraji Tokuyuki
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
-
Gheeraert Etienne
Institut Néel, CNRS and Université Joseph Fourier, BP 166, 38042 Grenoble Cedex 9, France
-
Bustarret Etienne
Institut Néel, CNRS and Université Joseph Fourier, BP 166, 38042 Grenoble Cedex 9, France
-
Koide Yasuo
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
-
Liao Meiyong
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
著作論文
- Appearance of n-Type Semiconductingg Properties of cBN Single Crystals Grown at High Pressure : Semiconductors
- Near-Surface Defects in Boron-Doped Diamond Schottky Diodes Studied From Capacitance Transients
- Hillock-Free Homoepitaxial Diamond (100) Films Grown at High Methane Concentrations
- Chemical Vapor Deposition of C Isotopically Enriched Polycrystalline Diamond (SELECTED TOPICS IN APPLIED PHYSICS : Diamond Semiconductors : from Materials to Devices)
- Effective Use of Source Gas for Diamond Growth with Isotopic Enrichment
- Synchronized B and
- Synchronized B and ¹³C Diamond Delta Structures for an Ultimate In-Depth Chemical Characterization
- Effective Use of Source Gas for Diamond Growth with Isotopic Enrichment
- Effective Use of Source Gas for Diamond Growth with Isotopic Enrichment