Synchronized B and

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概要

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• The nanometer-range depth resolution of secondary ion mass spectrometry (SIMS) profiles in diamond was achieved by the determination of the depth resolution function (DRF). The measurement of this DRF was performed thanks to isotopic-enriched diamond delta structures composed of ¹²C and ¹³C. The artificial SIMS broadening observed on the ¹³C depth profiles of buried doped diamond epilayers was eliminated and replaced by a boxlike ¹³C depth profile. Applied to boron delta-doped diamond structures, this analysis has resolved edge widths close to 0.3 nm/dec, as compared with 1.5 nm/decade on the raw SIMS data.

• 2013-04-25

著者

• Teraji Tokuyuki

  National Inst. For Materials Sci. Ibaraki Jpn

• KOIZUMI Satoshi

  National Institute for Research in Inorganic Materials

• Teraji Tokuyuki

  National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan

• Fiori Alexandre

  Institut Néel, CNRS and Université Joseph Fourier, BP 166, 38042 Grenoble Cedex 9, France

• Jomard François

  GEMaC, CNRS and Université Versailles St Quentin, 45, avenue des Etats-Unis, 78035 Versailles Cedex, France

• Isoya Junichi

  Tsukuba University, Tsukuba, Ibaraki 305-8550, Japan

• Gheeraert Etienne

  Institut Néel, CNRS and Université Joseph Fourier, BP 166, 38042 Grenoble Cedex 9, France

• Bustarret Etienne

  Institut Néel, CNRS and Université Joseph Fourier, BP 166, 38042 Grenoble Cedex 9, France

• Koizumi Satoshi

  National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan

• Gheeraert Etienne

  Institut Néel, CNRS and Université Joseph Fourier, BP 166, 38042 Grenoble Cedex 9, France

• Bustarret Etienne

  Institut Néel, CNRS and Université Joseph Fourier, BP 166, 38042 Grenoble Cedex 9, France

関連論文

• Nanoprocessing of Diamond Using a Variable Pressure Scanning Electron Microscope
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• Appearance of n-Type Semiconductingg Properties of cBN Single Crystals Grown at High Pressure : Semiconductors
• Near-Surface Defects in Boron-Doped Diamond Schottky Diodes Studied From Capacitance Transients
• Structure Analysis of SrTiO_3(111) Polar Surfaces
• Hillock-Free Homoepitaxial Diamond (100) Films Grown at High Methane Concentrations
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• Chemical Vapor Deposition of C Isotopically Enriched Polycrystalline Diamond (SELECTED TOPICS IN APPLIED PHYSICS : Diamond Semiconductors : from Materials to Devices)
• Electron Spectroscopic Determination of Electronic Structures of Phosphorus-Doped n-Type Heteroepitaxial Diamond (001) Surface and Junction (SELECTED TOPICS IN APPLIED PHYSICS : Diamond Semiconductors : from Materials to Devices)
• Effective Use of Source Gas for Diamond Growth with Isotopic Enrichment
• Synchronized B and
• Synchronized B and ¹³C Diamond Delta Structures for an Ultimate In-Depth Chemical Characterization
• Effective Use of Source Gas for Diamond Growth with Isotopic Enrichment
• Effective Use of Source Gas for Diamond Growth with Isotopic Enrichment

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