The Effects of Ba-Additive on Growth of a-Plane GaN Single Crystals Using Na Flux Method

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概要

• 論文の詳細を見る

• Large-area nonpolar GaN substrates with high crystallinity are necessary to improve the performance of GaN devices. Nonpolar GaN substrates of 2-in. diameter have been commercially fabricated by growing along the nonpolar direction on heterogeneous substrates. However, the crystallinity of the nonpolar GaN substrates requires improvement. Here, we grew a-plane GaN crystals using the Na flux method and investigated the effects of a Ba-additive on surface morphology and crystallinity. We found that the crystallinity of the crystals grown by the Na flux method was greatly improved compared with that of seed substrates. Moreover, the use of the Ba-additive suppressed the formation of voids that occurred during the Na flux growth without the Ba-additive. As a result, a-plane GaN crystals with high crystallinity were produced using the Na flux method with the Ba-additive.

• 2012-04-25

著者

• Yoshimura Masashi

  Department Of Applied Biological Chemistry The University Of Tokyo

• Mori Yusuke

  Department Of Applied Chemistry School Of Science And Engineering Waseda University

• Matsuo Daisuke

  Department Of Applied Chemistry Okayama University Of Science

• Murakami Kosuke

  Department Of Applied Molecular Biosciences Graduate School Of Bioagricultural Sciences Nagoya Unive

• Todoroki Yuma

  Department Of Electrical Electronic And Information Engineering Osaka University

• Masumoto Keiko

  Department Of Electrical Electronic And Information Engineering Osaka University

• Imabayashi Hiroki

  Department Of Electrical Electronic And Information Engineering Osaka University

• Imade Mamoru

  Department Of Electrical Electronic And Information Engineering Osaka University

• Sasaki Takatomo

  Department Of Electrical Electronic And Information Engineering Osaka University

• Takazawa Hideo

  Department Of Electrical Electronic And Information Engineering Osaka University

• Maruyama Mihoko

  Department Of Electrical Electronic And Information Engineering Osaka University

• Mori Yusuke

  Department of Electrical Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Kitaoka Yasuo

  Department of Electrical Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Someno Tatsuya

  Department of Electrical Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Kitamoto Akira

  Department of Electrical Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Imabayashi Hiroki

  Department of Electrical Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Takazawa Hideo

  Department of Electrical Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Maruyama Mihoko

  Department of Electrical Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Sasaki Takatomo

  Department of Electrical Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Imade Mamoru

  Department of Electrical Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan

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