Observation of Strain Effects of SrTiO3 Thin Films by Terahertz Time-Domain Spectroscopy with a 4-Dimethylamino-N-methyl-4-stilbazolium Tosylate Emitter
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概要
- 論文の詳細を見る
We measured strain effects of SrTiO3 (STO) thin films by terahertz time-domain spectroscopy (THz-TDS) with a 4-dimethylamino-N-methyl-4-stilbazolium tosylate (DAST) crystal that was expected to be a broadband THz emitter. STO thin films were deposited on MgAl2O4, MgO, and LSAT substrates, and lattice constants of the films changed from the value of unstrained STO bulk because of lattice mismatches between STO and the substrates. The dielectric dispersions of the STO thin films deposited on MgO and MgAl2O4 were measured up to 6.0 THz by the broadband THz-TDS system and all the features of dielectric peaks of soft modes responsible for ferroelectricity were clearly observed. The soft-mode frequencies of the films shifted from the original value of STO bulk owing to the strain effects. In particular, the softening of the soft mode of the film on MgAl2O4, which implied that the in-plane tensile strain enhanced ferroelectric fluctuations, was of interest.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-09-25
著者
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竹家 啓
大阪大学大学院基礎工学研究科
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Kawayama Iwao
Institute Of Laser Engineering Osaka University
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Yoshimura Masashi
Department Of Applied Biological Chemistry The University Of Tokyo
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Kinjo Ryuhei
Institute Of Laser Engineering Osaka University
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Tonouchi Masayoshi
Institute Of Laser Engineering Osaka University
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Murakami Hironaru
Institute Of Laser Engineering Osaka University
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Takeya Kei
Institute Of Laser Engineering Osaka University
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Mori Yusuke
Department Of Applied Chemistry School Of Science And Engineering Waseda University
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Takahashi Yoshinori
Department Of Applied Chemistry Faculty Of Science And Technology Keio University
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Sasaki Takatomo
Department Of Electrical Electronic And Information Engineering Osaka University
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Matsukawa Takeshi
Department of Electrical Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Kitaoka Yasuo
Department of Electrical Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Kitaoka Yasuo
Department of Electrical Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Takeya Kei
Division of Chemical Engineering, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
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Takeya Kei
Institute of Laser Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Takahashi Yoshinori
Department of Electrical Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Kawayama Iwao
Institute of Laser Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Kinjo Ryuhei
Institute of Laser Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Sasaki Takatomo
Department of Electrical Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Murakami Hironaru
Institute of Laser Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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