Effects of Solution Stirring on the Growth of Bulk GaN Single Crystals by Na Flux Method
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概要
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Recently, we succeeded in fabricating centimeter-sized bulk gallium nitride (GaN) crystals with large dislocation-free areas on a GaN point seed. However, problems of polycrystal formation, skeletal growth, and low growth rate still remained. In this study, to suppress skeletal growth, polycrystals formation and increase the growth rate, we introduced two types of solution-stirring techniques --- rotating stirring and swinging stirring --- in the growth on point seeds by the Na flux method. We found that increasing the reversal frequency of the rotating stirring and increasing the rate of the swinging stirring increased the growth rate and suppressed the formation of polycrystals and skeletal growth. Moreover, the maximum c-direction growth rate of 46 μm/h was achieved without the formation of polycrystals and skeletal growth. We conclude that solution stirring may be an effective technique for fabricating high-quality large bulk GaN crystals.
- 2013-08-25
著者
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Yoshimura Masashi
Department Of Applied Biological Chemistry The University Of Tokyo
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Mori Yusuke
Department Of Applied Chemistry School Of Science And Engineering Waseda University
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Matsuo Daisuke
Department Of Applied Chemistry Okayama University Of Science
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Todoroki Yuma
Department Of Electrical Electronic And Information Engineering Osaka University
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Imabayashi Hiroki
Department Of Electrical Electronic And Information Engineering Osaka University
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Imade Mamoru
Department Of Electrical Electronic And Information Engineering Osaka University
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Takazawa Hideo
Department Of Electrical Electronic And Information Engineering Osaka University
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Maruyama Mihoko
Department Of Electrical Electronic And Information Engineering Osaka University
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Kitamoto Akira
Department of Electrical Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Murakami Kousuke
Department of Electrical Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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