Growth of Bulk GaN Single Crystals Using Li-Na Mixed Flux System
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概要
- 論文の詳細を見る
We found the yield of GaN grown in a Li-Na flux system to be much higher than that grown in Na flux. Nitrogen dissolution seemed to increase with Li in solution, which promotes the growth of GaN crystals. In this paper, we report that the yield of GaN and habit modifications greatly depend on the composition of the Li-Na flux system and that GaN can be grown in a pure Li flux at about 50 atm.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-06-01
著者
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Yoshimura Masashi
Department Of Applied Biological Chemistry The University Of Tokyo
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Kawamura Fumio
Department Of Anesthesiology Saiseikai Utsunomiya Hospital
-
Iwahashi Tomoya
Department Of Electrical Engineering Osaka University
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Morishita Masanori
Deparrment Of Mathematics Faculty Of Science Kanazawa University
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Mori Yusuke
Department Of Applied Chemistry School Of Science And Engineering Waseda University
-
Sasaki Takatomo
Department Of Electrical Electronic And Information Engineering Osaka University
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Iwahashi Tomoya
Department of Electrical Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Morishita Masanori
Department of Electrical Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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